2SC5172 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED (PCT PROCESS) SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONSAPPLICATIONS li=tUsiiri-,,r-, 1;?Excellent Switching Times: tr=0.5,us (Max.), tf=0.3,us (Max.) at 1 ..
2SC5174 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONSapplications (computer, personal equipment, office equipment, measuring equipment, industrialroboti ..
2SC5174. ,TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC5177 ,NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATIONT84DATA SHEETSILICON TRANSISTOR2SC5177NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE ..
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2SK3979 , N-Channel Silicon MOSFET General-Purpose Switching Device Applications
2SK3979 , N-Channel Silicon MOSFET General-Purpose Switching Device Applications
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2SC5172
TRANSISTOR SILICON NPN TRIPLE DIFFUSED (PCT PROCESS) SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS
TOSHIBA 2SC5172
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
2SC51i72
SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING
APPLICATIONS
HIGH SPEED DC-DC CONVERTER APPLICATIONS
0 Excellent Switching Times
.' tr=0.5ps (Max.), tf=0.3/zs (Max.) at 1022A
0 High Collector Breakdown Voltage : VCE0=400V
5.6 MAX.
130 MIN.
0.75i0.15
2.54:0.25 2.54-+.0.25
MAXIMUM RATINGS (Tc = 25°C) m m
-. 1 2 3 _N' N
CHARACTERISTIC SYMBOL RATING UNIT :ri':--EEEIi,i."
Collector-Base Voltage VCBO 600 V O
. 1. BASE
Collector-Emi) Voltage VCEO 400 V 2. C OLLE CT OR
Emitter-Base Voltage VEBO V 3. EMITTER
DC I -
Collector Current C A JEDEC
Pulse ICP JEITA SC-67
Base Current IB A TOSHIBA 2-10R1A
Collector Power Ta=25°C P 2.0 Weight : 1.7g (Typ.)
. . . C W
Dissipation Te = 25°C 25
J unction Temperature Tj 150 °C
Storage Temperature Range Tstg -55--150 °C
1 2001-11-05
TOSHIBA 2SC5172
ELECTRICAL CHARACTERISTICS (Tc=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 500V, IE = 0 - - 20 pA
Emitter Cut-off Current IEBO VEB = 7V, 10 = 0 - - 100 nA
Collector-Base Breakdown
Voltage V (BR) CBO IC = 1mA, IE = 0 600 - - V
Colleetor-Emitter Breakdown - -
Voltage V (BR) CEO 10 - 10mA, IB =0 400 - - v
h = I = 1mA 1 - -
DC Current Gain FE (1) VCE 5V, C 3
hFE (2) VCE = 5V, 10 = 0.5A 20 - 65
Collector-Emitter Saturation
Voltage VCE (sat) IC = 2A, IB = 0.25A - - 1.0 V
Base-Emitter Saturation
Vol tage VBE (sat) 1C = 2A, IB = 0.25A - - 1.3 V
Rise Time tr 2%5 INPUT 113.1 fo-ui?,,'':)" - - 0.5
. . IBI - o
Switching . ul, IB2 o
Time Storage Time tstg 1B2 H - - 2.0 ps
. 1B1 = 0.25A I132 = -0.5A VCC
Fall Time tf DUTY CYCLE < 1% = 200V - - 0.3
2 2001-11-05
TOSHIBA
COLLECTOR CURRENT 10 (A)
DC CURRENT GAIN hFE
COLLECTOR. CURRENT 1C (A)
IC - VCE
COMMON
EMITTER
Tc = 25''C
2 4 6 8
COLLECTOR-EMITTER VOLTAGE VCE (V)
hFE - IC
Tc = 100°C
COMMON EMITTER
VCE =5V
0.01 0.1 1
0.03 CURVES MUST BE DERATED
COLLECTOR CURRENT Ic (A)
SAFE OPERATING AREA
10/rsMy
I MAX. .
(SONTINUOU Ims)k.
100msyf
OPERATION
Te = 25°C
lk. SINGLE NONREPETITIVE
PULSE Tc=25°C
LINEARLY WITH INCRESE
IN TEMPERATURE. VCEO MAX.
10 100
c0LLECT0R-EMITTER VOLTAGE VCE (V)
2SC5172
IC - VBE
COMMON EMITTER
VCE = 5V
COLLECTOR CURRENT 10 (A)
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE-EMITTER VOLTAGE VBE (V)
VCE (sat) - IC
COMMON EMITTER
Ic/IB=5 Tc--100oC
VOLTAGE VCE (sat) (V)
COLLECTOR—EMITTER SATURATION
0.01 0.1 1 10
COLLECTOR CURRENT IC (A)
rth - tw
CURVES SHOULD BE APPLIED IN THERMAL
LIMITED AREA.
(SINGLE NONREPETITIVE PULSE)
co INFINITE HEAT SINK
Ce) NO HEAT SINK
TRANSIENT THERMAL RESISTANCE
rth (° C / W)
0.001 0.01 0.1 1 10 100 1000
PULSE WIDTH tw (s)
TOSHIBA 2SC5172
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
4 2001-11-05
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www.loq.com
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