2SC5171 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Tc=25°C) Weight : 1.7g(Typ.)CHARACTERISTIC SYMBOL TEST CONDITION UNITCo ..
2SC5171. ,TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONSAPPLICATIONS1010.3¢3.2:0.22.7i0.20 High Transition Frequency : fT=200MHz (Typ.)O Complementary to 2 ..
2SC5172 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED (PCT PROCESS) SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONSAPPLICATIONS li=tUsiiri-,,r-, 1;?Excellent Switching Times: tr=0.5,us (Max.), tf=0.3,us (Max.) at 1 ..
2SC5174 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONSapplications (computer, personal equipment, office equipment, measuring equipment, industrialroboti ..
2SC5174. ,TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC5177 ,NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATIONT84DATA SHEETSILICON TRANSISTOR2SC5177NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE ..
2SK3973G ,Silicon N-channel MOS FETAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit Marking Symbol: 5VDrain-source sur ..
2SK3979 , N-Channel Silicon MOSFET General-Purpose Switching Device Applications
2SK3979 , N-Channel Silicon MOSFET General-Purpose Switching Device Applications
2SK3980 , N-Channel Silicon MOSFET General-Purpose Switching Device
2SK3991 ,SWITCHING N-CHANNEL POWER MOSFETfeatures a low on-state resistance and excellent switching TO-251 (MP-3) 2SK3991 characteristics, a ..
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2SC5171-2SC5171.
TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
TOSHIBA 2SC5171
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE
2SC51i71
POWER AMPLIFIER APPLICATIONS
DRIVER STAGE AMPLIFIER APPLICATIONS
0 High Transition Frequency t fT=200MHz (Typ.)
0 Complementary to 2SA1930
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
0.75 20.15
Collector-Base Voltage VCBO 180 V
Collector-Emi) Voltage VCEO 180 V 2.541025 2541025
Emitter-Base Voltage VEBO 5 V (f',. 1 2 3 _Ԥ N
Collector Current IC 2 A :,ii=eEr-cD,2,i_
Base Current IB 1 A o' "
Collector Power Ta = 25°C P 2.0 W l. BASE
Dissipation Te-- 25°C C 20 2. COLLECTOR
Junction Temperature Tj 150 ''C 3. EMITTER
Storage Temperature Range Tstg -55--150 "C JEDEC -
JEITA -
TOSHIBA 2-10R1A
ELECTRICAL CHARACTERISTICS (Tc = 25°C) Weight 2 1.7g (Typ.)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 180V, IE = 0 - - 5.0 PA
Emitter Cut-off Current IEBO VEB = 5V, IC = 0 - - 5.0 pA
Collector-Emir Breakdown
Vol tage V (BR) CEO IC - 10mA, IB - 0 180 - - V
. hFE (1) VCE = 5V, IC = 0.1A 100 - 320
DC Current Gain hFE (2) VCE = 5V, IC = 1A 50 - -
Collector-Emitter Saturation
Vol tage VCE (sat) 1C - IA, IB - 0.1A - 0.16 1.0 V
Base-Emitter Voltage VBE VCE = 5V, 10 = IA - 0.68 1.5 V
Transition Frequency fT VCE = 5V, IC = 0.3A - 200 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = o, f = 1MHz - 16 - pF
1 2001-11-05
TOSHIBA 2SC5171
IC - VCE IC - VBE
Fi, iii
D (D Tc=100°C
U U -25'C
g IB=2mA a
0 COMMON EMITTER Q COMMON EMITTER
Tc=25°C VCE=5V
0 2 4 6 8 10 0 0.4 0.8 1.2 1.6 2.0
COLLECTOR-EMITTER VOLTAGE VCE (V) BASE-EMITTER VOLTAGE VBE (V)
a VCE (sat) - IC hFE - IC
0 1000
ti CS"
'll 33 Tc--100oC M
M 8 In
E > = 100
E Tc=25°C Z
“.53 2
tcd ‘2
y > Tc-- -25''C fj,oi',Mfi' EMITTER tit','
ta; C B-- a
. 0.01 0.1 1 10 Li) 10
COLLECTOR CURRENT IC (A)
SAFE OPERATING AREA COMMON EMITTER
5 10 MAX. (PULSED) yd. 1 VCE=5V
3 0.01 0.1 1 10
COLLECTOR CURRENT IC (A)
IC MAX.
2 (CONTINU,
V 1 OUS)
0 5 DC OPERATION
E . Tc=25°C
b' 10msy.t.
O 100rnsyi.
g 0.05 .
o >.< SINGLE
0.03 NONREPETITIVE
PULSE Tc=25°C
CURVES MUST BE
DERATED LINEARLY
WITH INCREASE IN VCEO MAX.
0.01 TEMPERATURE.
3 10 30 100 300 1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
2 2001-11-05
TOSHIBA 2SC5171
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-11-05
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