2SC5150 ,Silicon NPN Power Transistors TO-3P(H)IS package2SC5150HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit in mmDISPLAY, COLOR TVHIGH SPEED SWITC ..
2SC5150 ,Silicon NPN Power Transistors TO-3P(H)IS packageAPPLICATIONS 15.5:05 03.6:03, 3.0i0.3i'z, o- TT- T wr 1. wr "r"Tf'tf't wr O . O 9 L0 -lnlgn voltage ..
2SC5161 , High breakdown voltage.VCEO = 400V NPN silicon transistor
2SC5161 TL B , High voltage switching transistor (400V, 2A)
2SC5161-TL-B , High voltage switching transistor (400V, 2A)
2SC5171 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Tc=25°C) Weight : 1.7g(Typ.)CHARACTERISTIC SYMBOL TEST CONDITION UNITCo ..
2SK3934. ,MOSFET 2SK/2SJ SeriesApplications Unit: mm • Low drain-source ON resistance: R = 0.23 (typ.) DS (ON)• High forward tra ..
2SK3935 ,Power MOSFET (N-ch 250V<VDSS≤500V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 450 V ..
2SK3938 ,Small-signal deviceSilicon MOSFETs (Small Signal) 2SK3938Silicon N-channel MOSFETFor switching circuitsUnit: mm+0.05 + ..
2SK3940 ,Power MOSFET (N-ch single 60V<VDSS≤150V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 75 V ..
2SK3947 ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 600 V ..
2SK3973G ,Silicon N-channel MOS FETAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit Marking Symbol: 5VDrain-source sur ..
2SC5150
Silicon NPN Power Transistors TO-3P(H)IS package
TOSHIBA 2SC5150
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
ZSCSTISI
HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION
Unit in mm
DISPLAY, COLOR TV
HIGH SPEED SWITCHING APPLICATIONS 15510.5 3.0i03
. o o - F
o High Voltage : VCBO = 1700V . q ut
0 Low Saturation Voltage : VCE (sat) = 3 V (Max.) N 'il
x'G cu
0 High Speed : tf = 0.15 ,us (Typ.)
0 Collector Metal (Fin) is Fully Covered with Mold Resin.
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT 'ii'
Collector-Base Voltage VCBO 1700 V ll
Collector-Emitter Voltage VCEO 700 V
. - l. BASE
Emitter Base Voltage DC IVEBO 13 V 2. COLLECTOR
Collector Current C A 3. EMITTER
Pulse ICP 20
JEDEC -
Base Current IB 5 A
Collector Power Dissipation P 50 W EIAJ -
(Tc = 25°C) C TOSHIBA 2-16E3A
Junction Temperature Tj 150 "C Weight : 5.5 g (Typ.)
Storage Temperature Range Tstg -55-150 "C
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 1700 V, IE = 0 - - 1 mA
Emitter Cut-off Current IEBO VEB = 5V, IC = 0 - - 10 pA
Collector-Emitter Breakdown
Voltage V (BR) CEO 10 - 10 mA, IB - 0 700 - - V
. hFE(1) VCE = 5V, IC = IA 10 - 28
C Current Gain hFE (2) VCE = 5V, 1C = 6A 4 - 8.5
Collector-Emitter Saturation
Voltage VCE (sat) 1C - 6A, 1B - 1.5A - - 3 V
Base-Emitter Saturation - -
Voltage VBE (sat) IC - 6A, IB - 1.5A - 0.9 1.2 V
Transition Frequency fT VCE = 10V, IE = 0.1 A - 2 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = o, f = 1 MHz - 185 - pF
Switching Storage Time tstg ICP = 5 A, IBI (end) = 1.0 A - 2.5 4.0 S
Time (Fig.1) Fall Time tf fH = 64 kHz - 0.15 0.3 /t
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the apflications of o_ur products. No responsibility is assumed by. TOSHIBA
CORPORATION for any infringements of intellectual property or other rights D the third parties which may result from its use. No license IS granted
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
1999-09-02 1/4
TOSHIBA 2SC5150
Fig.1 SWITCHING TIME TEST CIRCUIT
2SK528
INPUT 5: 1
g, g' '
7 8 ps LO N d
[ Ly = 120 pdl i,
15.6 #s VDD Cy = 4600 pF VCC
BASE CURRENT 0
COLLECTOR
CURRENT Base Current Gradient
dIB/dt = M(A/W)
(Note) : Leakage Inductance of secondary winding LB is 1.2 pH
1999-09-02 2/4
TOSHIBA
2SC5150
DC CURRENT GAIN hFE COLLECTOR CURRENT 10 (A)
COLLECTOR CURRENT 10 (A)
IC - VCE
0.7 0.6 "m--0.IA
COMMON EMITTER
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
hFE - IC
COMMON EMITTER
1 VCE = 5 V
0.01 0.03 0.1 0.3 1 3 10
COLLECTOR CURRENT IC (A)
IC - VBE
COMMON EMITTER
VCE = 5 v
4 100 25 To = -25'C
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR-EMI'I‘TER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMI'I‘TER VOLTAGE VCE (V)
VCE - IB
COMMON
EMITTER
Tc = -25T
1.6 2.4 3.2 4.0
COLLECTOR CURRENT IB (A)
VCE - IB
COMMON
EMITTER
Te = 25°C
1.6 2.4 3.2 4.0
BASE CURRENT IB (A)
VCE - IB
COMMON
EMITTER
Te = 100°C
1.6 2.4 3.2 4.0
BASE CURRENT IB (A)
1999-09-02 3/4
TOSHIBA 2SC5150
rth (i-e) - tw PC - Te
INFINITE HEAT SINK
Tc = 25°C (INFINITE HEAT SINK)
CURVE SHOULD BE APPLIED
IN THERMAL LIMITED AREA
(SINGLE NONREPETITIVE
PULSE)
TRANSIENT THERMAL IMPEDANCE
(JUNCTION-CASE) rm“) (°C/W)
COLLECTOR POWER DISSIPATXON PC (W)
1 m 10 m 0.1 1 10 100 1000 0 20 40 60 80 100 120 140 160
PULSE WIDTH tw (s) CASE TEMPERATURE Te CC)
SAFE OPERATING AREA
30 1C MAX. (PULSED) X 100 #5 X
100 ms X
10 MAX.
(CONTINUO
DC OPERATION
Te = 25°C
COLLECTOR CURRENT 10 (A)
yd. SINGLE NONREPETITIVE
PULSE Tc = 25°C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
1 3 10 30 100 300 1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
1999-09-02 4/4
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