2SC5149 ,Silicon NPN Power Transistors TO-3P(H)IS packageAPPLICATIONS m+r g, o g;ui,1't,O
2SC5150 ,Silicon NPN Power Transistors TO-3P(H)IS package2SC5150HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit in mmDISPLAY, COLOR TVHIGH SPEED SWITC ..
2SC5150 ,Silicon NPN Power Transistors TO-3P(H)IS packageAPPLICATIONS 15.5:05 03.6:03, 3.0i0.3i'z, o- TT- T wr 1. wr "r"Tf'tf't wr O . O 9 L0 -lnlgn voltage ..
2SC5161 , High breakdown voltage.VCEO = 400V NPN silicon transistor
2SC5161 TL B , High voltage switching transistor (400V, 2A)
2SC5161-TL-B , High voltage switching transistor (400V, 2A)
2SK3934 ,MOSFET 2SK/2SJ SeriesThermal Characteristics Characteristics Symbol Max Unit 2 Thermal resistance, channel to case R 2.5 ..
2SK3934. ,MOSFET 2SK/2SJ SeriesApplications Unit: mm • Low drain-source ON resistance: R = 0.23 (typ.) DS (ON)• High forward tra ..
2SK3935 ,Power MOSFET (N-ch 250V<VDSS≤500V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 450 V ..
2SK3938 ,Small-signal deviceSilicon MOSFETs (Small Signal) 2SK3938Silicon N-channel MOSFETFor switching circuitsUnit: mm+0.05 + ..
2SK3940 ,Power MOSFET (N-ch single 60V<VDSS≤150V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 75 V ..
2SK3947 ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 600 V ..
2SC5149
Silicon NPN Power Transistors TO-3P(H)IS package
TOSHIBA
2SC5149
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC51149
HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION
DISPLAY, COLOR TV
HIGH SPEED SWITCHING APPLICATIONS
0 High Speed : tf = 0.2 ,us (Typ.)
0 High Voltage : VCBO = 1500V
0 Low Saturation Voltage : VCE (sat) = 5V (Max.)
Unit in mm
15.5 $0.5
22.0:05
o Bult-in Damper Type
0 Collector Metal (Fin) is Fully Covered with Mold Resin.
tit'' £1
t 1 2 3 m
MAXIMUM RATINGS Ta = 25°C -c',-c'zi'ctr--r--l-
( ) 2 F'--""-'"-''-!--"
et l. BASE
CHARACTERISTIC SYMBOL RATING UNIT Ni 2. COLLECTOR
Collector-Base Voltage VCBO 1500 V 3. EMITTER
Collector-Emitter Voltage VCEO 600 V JEDEC -
Emitter-Base Voltage VEBO 5 V EIA J -
Collector Current DC C A TOSHIBA 2-16E3A
Pulse ICP 16 w . ht . 5 5 (T )
Base Current IB 4 A wg . . g y p.
Collector Power Dissipation
(Tc = 25°C) C 50 W
Junction Temperature Tj 150 T
Storage Temperature Range Tstg -55--150 t
EQUIVALENT CIRCUIT
COLLECTOR
50 ft (Typ.) EMITTER
961001 EAA1
and con itions set forth in the TOSHIBA Semiconductor Reliability Handbook.
property or other rights of TOSHIBA CORPORATION or others.
OThe information contained herein is subject to change without notice.
OTOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid
situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or
damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operatin ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions
OThe information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third
parties which may result from its use. No license is granted by implication or otherwise under any intellectual
1999-09-02 1/4
TOSHIBA 2SC5149
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 1500 V, IE = 0 - - 1 mA
Emitter Cut-off Current IEBO VEB = 5V, IC = 0 66 - 200 mA
Emitter-Base Breakdown
Voltage VEBO IE - 400 mA, 1C - 0 5 - - V
. hFE (1) VCE = 5V, 10 = IA 8 - 25
DC Current Gain hFE (2) VCE = 5V, IC = 5A 3.8 - 8.0
Collector-Emitter Saturation
Voltage VCE (sat) IC - 5A, IB - 1.3A - - 5 V
Base-Emitter Saturation - -
Voltage VBE (sat) IC - 5 A, IB - 1.3 A - 1.0 1.3 V
Forward Voltage -
(Damper Diode) -VF IF - 5 A - 1.35 1.8 V
Transition Frequency fT VCE = 10V, 1C = 0.1 A - 2 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = 0, f = 1 MHz - 110 - pl?
Switching Storage Time tstg ICP = 5 A, 1B1 (end) = 1.1 A, - 4 6 s
Time Fall Time tf fH = 31.5 kHz - 0.2 0.5 /2
1999-09-02 2/4
TOSHIBA
2SC5149
COLLECTOR CURRENT 10 (A)
DC CURRENT GAIN hFE
COLLECTOR CURRENT 10 (A)
IC - VCE
COMMON
EMITTER
Tc = 25°C
0 2 4 6 8 10 12
COLLECTOR-EMITTER VOLTAGE VCE (V)
hFE - IC
COMMON
EMITTER
VCE =5V
Tc = -25'C
0.01 0.03 0.1 0.3 1 3 10
COLLECTOR CURRENT 1C (A)
IC - VBE
COMMON
EMITTER
VCE=5V
6 wo/st
".,,,,// //
0 0.4 0.8 1.2
COLLECTOR-EMITTER VOLTAGE VBE (V)
COLLECTOEEMITTER VOLTAGE VCE (V)
COLLECTOR—EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE - IB
COMMON
EMITTER
Tc = -25''C
0.8 1.6 2.4 3.2 4.0
BASE CURRENT IB (A)
VCE - IB
COMMON
EMITTER
Tc = 25°C
0.8 1.6 2.4 3.2 4.0
BASE CURRENT 1B (A)
VCE - IB
COMMON
EMITTER
Tc = 100°C
0.8 1.6 2.4 3.2 4.0
BASE CURRENT 1B (A)
1999-09-02 3/4
TOSHIBA
2SC5149
rth (j-c) - tw
Tc = 25''C
(INFINITE HEAT SINK)
CURVES SHOULD BE
APPLIED IN THERMAL
LIMITED AREA
(SINGLE
NONREPETITIVE
PULSE)
. 1m 10m 0.1 1 10 100 1000
TRANSIENT THERMAL IMPEDANCE
(JUNCTION-CASE) twa_c) (°C/W)
PULSE WIDTH tw (s)
SAFE OPERATING AREA
50 , , , .
30 -IC MAX.(PULSED)iif ‘10,us>:< fl-l)
AC MAX. (PULSED) .yd. _ _ 100 ps>2<
\ , msk'f "
10 \\\\ Sy,'' \ N
A N ' Nt ,
s 5 IC MAX. N. h '"ri? h h
U (CONTINUOUS) N \ t' I ll' . l
H 'Cl l lllllll \vamsA
E THERMAL LIMITED N l
E 1 I III I N,
g DC OPERATIO h \
0 0 5 Tc = 25°C k h
o \ NN \
e 0.3 l
d )N.(. SINGLE \\
o 0.1 NONREPETITIVE =S/B LIMITED Ns
PULSE Tc = 25''C \ _
50m CURVES MUST BE ,
DERATED _ h'
30m LINEARLY WITH ,
INCREASE IN
TEMPERATURE. VCEO MAX
10m III I l l
1 3 10 30 100 300 1000
COLLECTOR EMITTER VOLTAGE VCE (V)
COLLECTOR POWER DISSIPATION
PC (W)
INFINITE HEAT SINK
0 20 40 60 80 100 120 140 160
CASE TEMPERATURE Tc CC)
1999-09-02 4/4
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