2SC5148 ,Silicon NPN Power Transistors TO-3P(H)IS package2SC51487QCE1ARHORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit in mmDISPLAY, COLOR TVHIGH SPEE ..
2SC5148 ,Silicon NPN Power Transistors TO-3P(H)IS packageAPPLICATIONS 15.5:05 03.6:03, 3.0i0.3i'z, o- TT- T H T n n "e Im x O . O 9 L0 -lnlgn wpeeu : tf = 0 ..
2SC5149 ,Silicon NPN Power Transistors TO-3P(H)IS packageAPPLICATIONS m+r g, o g;ui,1't,O
2SC5150 ,Silicon NPN Power Transistors TO-3P(H)IS package2SC5150HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit in mmDISPLAY, COLOR TVHIGH SPEED SWITC ..
2SC5150 ,Silicon NPN Power Transistors TO-3P(H)IS packageAPPLICATIONS 15.5:05 03.6:03, 3.0i0.3i'z, o- TT- T wr 1. wr "r"Tf'tf't wr O . O 9 L0 -lnlgn voltage ..
2SC5161 , High breakdown voltage.VCEO = 400V NPN silicon transistor
2SK3934 ,MOSFET 2SK/2SJ SeriesThermal Characteristics Characteristics Symbol Max Unit 2 Thermal resistance, channel to case R 2.5 ..
2SK3934. ,MOSFET 2SK/2SJ SeriesApplications Unit: mm • Low drain-source ON resistance: R = 0.23 (typ.) DS (ON)• High forward tra ..
2SK3935 ,Power MOSFET (N-ch 250V<VDSS≤500V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 450 V ..
2SK3938 ,Small-signal deviceSilicon MOSFETs (Small Signal) 2SK3938Silicon N-channel MOSFETFor switching circuitsUnit: mm+0.05 + ..
2SK3940 ,Power MOSFET (N-ch single 60V<VDSS≤150V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 75 V ..
2SK3947 ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 600 V ..
2SC5148
Silicon NPN Power Transistors TO-3P(H)IS package
TOSHIBA 2SC5148
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC51148
HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION
Unit in mm
DISPLAY, COLOR TV
HIGH SPEED SWITCHING APPLICATIONS 15510.5 sores
. o o - F
o High Speed : tf= 0.15 ,us (Typ.) . q ut
o High Voltage : VCBO = 1500V N 'il
0 Low Saturation Voltage : VCE (sat) = 5V (Max.) i
0 Collector Metal (Fin) is Fully Covered with Mold Resin
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT 'ii'
Collector-Base Voltage VCBO 1500 V ll
Collector-Emi; Voltage VCEO 600 V
. - l. BASE
Emitter Base Voltage DC IVEBO 2 V 2. COLLECTOR
Collector Current C A 3. EMITTER
Pulse ICP 16
JEDEC -
Base Current IB 4 A
Collector Power Dissipation P 50 W EIAJ -
(Tc = 25°C) C TOSHIBA 2-16E3A
Junction Temperature Tj 150 "C Weight : 5.5 g (Typ.)
Storage Temperature Range Tstg -55-150 "C
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 1500 V, IE = 0 - - 1 mA
Emitter Cut-off Current IEBO VEB = 5V, IC = 0 - - 10 pA
Collector-Emir Breakdown
Voltage V (BR) CEO 10 - 10 mA, IB - 0 600 - - V
. hFE(1) VCE=5V,IC=1A 8 - 25
C Current Gain hFE (2) VCE = 5V, IC = 5A 3.8 - 8.0
Collector-Emitter Saturation
Voltage VCE (sat) 1C - 5A, 1B - 1.3 A - - 5 V
Base-Emitter Saturation - -
Voltage VBE (sat) IC - 5 A, IB - 1.3 A - 1.0 1.3 V
Transition Frequency fT VCE = 10V, IC = 0.1 A - 2 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = o, f = 1 MHz - 110 - pF
Switching Storage Time tstg ICP = 4A, 1B1 (end) = 0.8A - 2.5 4 s
Time (Fig.1) Fall Time tf fH = 64 kHz - 0.15 0.3 /t
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the apflications of o_ur products. No responsibility is assumed by. TOSHIBA
CORPORATION for any infringements of intellectual property or other rights D the third parties which may result from its use. No license IS granted
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
1999-09-02 1/4
TOSHIBA
Fig.1 SWITCHING TIME TEST CIRCUIT
2SK528
BASE CURRENT
COLLECTOR CURRENT
ZOOOPF 2. 4kQ
0. 022#F
ZSC5148
Ly = 145 pdl i,
Cy = 6200 pF VCC
Base Current Gradient
dl /dt =
B tstg
(Note) .' Leakage Inductance of secondary winding LB is 1.2 pH
1999-09-02 2/4
TOSHIBA
ZSC5148
COLLECTOR CURRENT 10 (A)
IC - VCE
COMMON EMITTER
1.8 TC = 25°C
4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
DC CURRENT GAIN hm
0.01 0.03
hFE - IC
COMMON EMITTER
VCE = 5 V
0.1 0.3 1 3 10
COLLECTOR CURRENT IC (A)
IC - VBE
COMMON EMITTER
VCE=5V
COLLECTOR CURRENT 10 (A)
0.4 0.6 0.8 1.0 1.2 1.4
EMITTER VOLTAGE VBE (V)
COLLECTOR-EMI'I‘TER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMI'I‘TER VOLTAGE VCE (V)
VCE- IB
COMMON
EMITTER
Te = -25'C
1.6 2.4 3.2 4.0
BASE CURRENT IB (A)
VC E - IB
COMMON
EMITTER
Te = 25°C
1.6 2.4 3.2 4.0
BASE CURRENT IB (A)
VCE- IB
COMMON
EMITTER
Tc = 100°C
1.6 2.4 3.2 4.0
BASE CURRENT IB (A)
1999-09-02 3/4
TOSHIBA
ZSC5148
TRANSIENT THERMAL IMPEDANCE
(JUNCTION-CASE) rm“) (°C/W)
COLLECTOR CURRENT 10 (A)
rth (i-e) - tw
Te = 25°C (INFINITE HEAT SINK)
CURVE SHOULD BE APPLIED IN THERMAL
LIMITED AREA
(SINGLE NONREPETITIVE PULSE)
1m 10m 0.1 1 10 100 1000
PULSE WIDTH tw (s)
SAFE OPERATING AREA
10 MAX. (PULSED))k. I I I H
30 I I IIIIIII 100 .yrys N
w. BP.;
IC MAX. (PULSED) .8. _ # "s, No. psy.T. -
I I I II It ,
100ms8s, _ N N
10 I T I T I "N, ' _
" MAX. N , h
5 -(CONTINUOUS, h l \
I I I I A , .
3 -nc OPE TION\\ 'io ms .yry
_Tc = 25°C NN, N
I I I I I IIII N N 1 N
THERMAL LIMITED N ms
0.5 I A
0.3 N), l
S/B LIMITED \
0.1 HI!!!” I,,
J.K. SINGLE NONREPETITIVE \ _
50m PULSE Tc= 25°C hh
30m CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
10 TEMPERATURE. VCEO MAX.
m . . . .
1 3 10 30 100 300 1000
COLLECTOR-EMITTER VOLTAGE VCE
COLLECTOR POWER DISSIPATXON PC (W)
INFINITE HEAT SINK
40 60 80 100 120
CASE TEMPERATURE Te CC)
140 160
1999-09-02 4/4
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