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2SC5144,TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV, HIGH SPEED SWITCHING APPLICATIONS
2SC5144 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV, HIGH SPEED SWITCHING APPLICATIONSAPPLICATIONS 20.5MAX. 3.3t.0.2 _o.Eil-iii'- TT'1 (N T 1 'Nee Im x . A L?. nlgn wpeeu : tf = 0.10 ps ..
2SC5145 ,Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)Absolute Maximum Ratings (T =25˚C)n C13 22:Collector3:EmitterParameter Symbol Ratings UnitN Type P ..
2SC5147 , TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE
2SC5148 ,Silicon NPN Power Transistors TO-3P(H)IS package2SC51487QCE1ARHORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit in mmDISPLAY, COLOR TVHIGH SPEE ..
2SC5148 ,Silicon NPN Power Transistors TO-3P(H)IS packageAPPLICATIONS 15.5:05 03.6:03, 3.0i0.3i'z, o- TT- T H T n n "e Im x O . O 9 L0 -lnlgn wpeeu : tf = 0 ..
2SC5149 ,Silicon NPN Power Transistors TO-3P(H)IS packageAPPLICATIONS m+r g, o g;ui,1't,O
2SK3919-ZK ,SWITCHING N-CHANNEL POWER MOSFETfeatures a low on-state resistance and excellent switching 2SK3919 TO-251 (MP-3) characteristics, a ..
2SK3934 ,MOSFET 2SK/2SJ SeriesThermal Characteristics Characteristics Symbol Max Unit 2 Thermal resistance, channel to case R 2.5 ..
2SK3934. ,MOSFET 2SK/2SJ SeriesApplications Unit: mm • Low drain-source ON resistance: R = 0.23 (typ.) DS (ON)• High forward tra ..
2SK3935 ,Power MOSFET (N-ch 250V<VDSS≤500V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 450 V ..
2SK3938 ,Small-signal deviceSilicon MOSFETs (Small Signal) 2SK3938Silicon N-channel MOSFETFor switching circuitsUnit: mm+0.05 + ..
2SK3940 ,Power MOSFET (N-ch single 60V<VDSS≤150V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 75 V ..
2SC5144
TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV, HIGH SPEED SWITCHING APPLICATIONS
TOSHIBA 2SC5144
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5M44
HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit in mm
DISPLAY, COLOR TV
HIGH SPEED SWITCHING APPLICATIONS 20.5MAX.
q High Speed : tf = 0.15 ,us (Typ.)
0 High Voltage : VCBO = 1700V
0 Low Saturation Voltage : VCE (sat) = 3 V (Max.)
20.0:06 26.
MAXIMUM RATINGS (Ta = 25°C) 10:83:;
CHARACTERISTIC SYMBOL RATING UNIT 5.45t0.15 5'45”"?
Collector-Base Voltage VCBO 1700 V g; m ro. if,
Co1leetor-Emitter Voltage VCEO 600 V 3 I .1 cm) t - N m
Emitter-Base Voltage VEBO 5 V 1 2 3 _
DC 1C 20 1. BASE
Collector Current Pulse I CP 40 A 2. COLLECTOR(HEAT SINK)
Base Current IB 10 A 3. EMITTER
. . . JEDEC -
Collector;> Power Dissipation PC 200 W
(Te = 25 C) EIAJ -
Junction Temperature Tj 150 OC TOSHIB A 2-21F2A
Storage Temperature Range Tstg -55--150 C Weight : 9.75 g (Typ.)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 1700 V, IE = 0 - - 1 mA
Emitter Cut-off Current IEBO VEB = 5V, IC = 0 - - 10 PA
Collector-Emitter Breakdown
Voltage V(BR) CEO 1C - 10 mA, 1B - 0 600 - - V
. hFE (1) VCE = 5V, IC = 2A 10 - 30
DC Current Gain hFE (2) VCE = 5V, IC = 11 A 4.5 - 8.5 -
Collector-Er/ter Saturation
Voltage VCE (sat) IC - 11 A, IB - 2.75A - - 3 V
Base-Emitter Saturation
Voltage VBE (sat) IC - 11 A, 1B - 2.75A - 1.0 1.3 V
Transition Frequency fT VCE = 10V, IE = 0.1 A - 1.7 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = o, f = 1 MHz - 290 - pF
Switching Storage Time tstg ICP = 10 A, 1B1 (end) = 1.8A - 2.5 4.0 s
Time (Fig.1) Fall Time tf fH = 64 kHz - 0.15 0.3 /2
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the ap Iications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights D the third parties which may result from its use. No license is granted
, implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 T e information contained herein is subject to change without notice.
1999-09-02 1/4
TOSHIBA 2SC5144
Fig.1 SWITCHING TIME TEST CIRCUIT
2SK528
INPUT m Js
c: g' g
7.8 ps 3 N o"
0 H L - 91 pH i,
15.6 ,us VDD Cy = 8100 pF VCC
BASE CURRENT
COLLECTOR CURRENT
Base Current Gradient
0 ----_-----r- sci'.
tf dIB/dt= BI
1B1_1B2 (A/ps)
(Note) : Leakage Inductance of secondary winding LB is 1.2 #H.
1999-09-02 2/4
TOSHIBA
2SC5144
DC CURRENT GAIN hFE COLLECTOR CURRENT 10 (A)
COLLECTOR CURRENT 1C (A)
IC - VCE
COMMON
EMITTER
Te = 25°C
2 4 6 8 10 12
COLLECTOR-EMITTER VOLTAGE VCE (V)
hFE - IC
COMMON
EMITTER
VCE = 5 V
Tc = 100°C
0.03 0.1 0.3 1 3 10 30
COLLECTOR CURRENT IC (A)
IC - VBE
COMMON
EMITTER
VCE = 5 V
0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE - IB
COMMON
EMITTER
Tc = -25°C
12 14 IC = 16A
4 6 8 10
BASE CURRENT IB (A)
VCE - IB
COMMON
14 IC = 16A EMITTER
Te = 25°C
4 6 8 10
BASE CURRENT IB (A)
VCE - IB
a. E 'Y 556$
12 14 IC = 16A Tc = 100°C
4 6 8 10
BASE CURRENT IB (A)
1999-09-02 3/4
TOSHIBA
2SC5144
rth (i-e) - tw
Tc = 25°C (INFINITE HEAT SINK)
CURVE SHOULD BE APPLIED IN
THERMAL LIMITED AREA (SINGLE
NONREPETITIVE PULSE)
TRANSIENT THERMAL IMPEDANCE
(JUNCTION-CASE) rm“) (°C/W)
0.1m 1m 10m 0.1 l 10 100
PULSE WIDTH tw (s)
SAFE OPERATING AREA
. . .100 [15%
MAX. (PULSED) y.f msy.4
IC MAX. 0 mskt.
10 (CONTINUOUS)
5 100 ms)k.
DC OPERATION
Te = 25°C
COLLECTOR CURRENT 10 (A)
50m .)if SINGLE NONREPETITIVE
PULSE Te = 25°C
30m CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE. VCEO MAX.
1 3 10 30 100 300 1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR POWER DISSIPATXON PC (W)
PC - Te
INFINITE HEAT SINK
0 25 50 75 100 125 150
CASE TEMPERATURE Te CC)
1999-09-02 4/4
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