2SC5143 ,Silicon NPN Power Transistors TO-3P(H)IS packageAPPLICATIONS m_+_r all CY gl, ELc,High Voltage : VCBO = 1700VLow Saturation Voltage : VCE (sat) = 3 ..
2SC5144 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV, HIGH SPEED SWITCHING APPLICATIONSAPPLICATIONS 20.5MAX. 3.3t.0.2 _o.Eil-iii'- TT'1 (N T 1 'Nee Im x . A L?. nlgn wpeeu : tf = 0.10 ps ..
2SC5145 ,Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)Absolute Maximum Ratings (T =25˚C)n C13 22:Collector3:EmitterParameter Symbol Ratings UnitN Type P ..
2SC5147 , TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE
2SC5148 ,Silicon NPN Power Transistors TO-3P(H)IS package2SC51487QCE1ARHORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit in mmDISPLAY, COLOR TVHIGH SPEE ..
2SC5148 ,Silicon NPN Power Transistors TO-3P(H)IS packageAPPLICATIONS 15.5:05 03.6:03, 3.0i0.3i'z, o- TT- T H T n n "e Im x O . O 9 L0 -lnlgn wpeeu : tf = 0 ..
2SK3919 ,SWITCHING N-CHANNEL POWER MOSFETDATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3919SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERI ..
2SK3919 ,SWITCHING N-CHANNEL POWER MOSFETapplications such as DC/DC converter with synchronous rectifier. (TO-251)
2SK3919-ZK ,SWITCHING N-CHANNEL POWER MOSFETfeatures a low on-state resistance and excellent switching 2SK3919 TO-251 (MP-3) characteristics, a ..
2SK3934 ,MOSFET 2SK/2SJ SeriesThermal Characteristics Characteristics Symbol Max Unit 2 Thermal resistance, channel to case R 2.5 ..
2SK3934. ,MOSFET 2SK/2SJ SeriesApplications Unit: mm • Low drain-source ON resistance: R = 0.23 (typ.) DS (ON)• High forward tra ..
2SK3935 ,Power MOSFET (N-ch 250V<VDSS≤500V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 450 V ..
2SC5143
Silicon NPN Power Transistors TO-3P(H)IS package
TOSHIBA 2SC5143
TOSHIBA FIELD EFFECT TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
ZSCS’MLB
HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit in mm
DISPLAY, COLOR TV
15.5 $0.5
HIGH SPEED SWITCHING APPLICATIONS
0 High Voltage '. VCBO = 1700V
26.5:t .5
22.0i0.5
0 Low Saturation Voltage : VCE (sat) = 3 V (Max.)
It High Speed : tf = 0.2 gs (Typ.)
0 Bult-in Damper Type
0 Collector Metal (Fin) is Fully Covered with Mold Resin.
MAXIMUM RATINGS (Ta = 25°C) 3_
CHARACTERISTIC SYMBOL RATING UNIT l. B ASE
Collector-Base Voltage VCBO 1700 V g" Ecf)/iTEEc,'/'R
Co1leetor-Emitter Voltage VCEO 700 V
Emitter-Base Voltage VEBO 5 V JEDEC -
DC IC 10 EIAJ -
Collector Current Pulse ICP 20 A T OSHIB A 2-16E3A
Base Current IB 5 A Weight : 5.5 g (Typ.)
Collector Power Dissipation
(Te = 25°C) PC 50 W
Junction Temperature Tj 150 T
Storage Temperature Range Tstg -55--150 T
EQUIVALENT CIRCUIT
COLLECTOR
40 fl (Typ.) EMITTER
961001 EAA1
OTOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid
situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or
damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions
and con itions set forth in the TOSHIBA Semiconductor Reliability Handbook.
OThe information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third
parties which may result from its use. No license is granted by implication or otherwise under any intellectual
property or other rights of TOSHIBA CORPORATION or others.
OThe information contained herein is subject to change without notice.
1999-09-02 1/4
TOSHIBA 2SC5143
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 1700 V, IE = 0 - - 1 mA
Emitter Cut-off Current IEBO VEB = 5V, 10 = 0 83 - 250 mA
Emitter-Base Breakdown
Voltage VEBO IE - 400 mA, IC - 0 5 - - V
. hFE (1) VCE = 5V, 10 = IA 8 - 25
DC Current Gain hFE (2) VCE = 5V, IC = 6 A 4 - 8.5
Collector-Emir Saturation
Voltage VCE (sat) IC - 6A, IB - 1.5A - - 3 V
Base-Emitter Saturation
Voltage VBE (sat) IC - 6A, IB - 1.5A - 0.9 1.2 V
Forward Voltage -
(Damper Diode) -VF IF - 6A - 1.45 1.8 V
Transition Frequency fT VCE = 10V, IE = 0.1 A - 2 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = o, f = 1 MHz - 185 - pF
Switching Storage Time tstg ICP = 5 A, 1B1 (end) = 1.0 A - 4 6 s
Time Fall Time tf fH = 31.5 kHz - 0.2 0.5 /I
1999-09-02 2/4
TOSHIBA
2SC5143
COLLECTOR CURRENT [C (A)
DC CURRENT GAIN hm;
COLLECTOR CURRENT 10 (A)
IC - VCE
113 = 0.2A
MMON EMITTER
c = 25°C
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
hFE - IC
COMMON EMITTER
VCE = 5 v
Te = -25''C
0.01 0.03 0.1 0.3 1 3 10 30
COLLECTOR CURRENT IC (A)
IC - VBE
COMMON EMITTER
VCE = 5 V
0 0.2 0.4 0.6 0.8 LO 1.2
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE - IB
COMMON EMITTER
Tc = -25'C
0.8 1.2 1.6 2.0 2.4
BASE CURRENT IB (A)
VCE - IB
COMMON EMITTER
Te = 25''C
0,8 1.2 1.6 2.0 2.4
BASE CURRENT IB (A)
VCE - IB
COMMON EMITTER
Te = 100°C
0.8 1.2 1.6 2.0 2.4
BASE CURRENT IB (A)
1999-09-02 3/4
TOSHIBA 2SC5143
PC - Te rth (i-e) - tw
Tc = 25''C (INFINITE HEAT SINK)
a INFINITE HEAT SINK " CURVES SHOULD BE APPLIED IN THERMAL
2 Egg LIMITED AREA. (SINGLE NONREPETITIVE
ti Z 'ss PULSE)
9: g 53
© E g 10
:3; i '
O D at A
n. m m 'e, 1
n: 3: <
a r'c?
4 ',CC'C'. 0.1
V 0.01
0 25 50 75 100 125 150 175 lm 10m 0.1 1 10 100 1000
CASE TEMPERATURE Tc (°C) PULSE WIDTH tw (s)
SAFE OPERATING AREA
IC MAX. (PULSED) X
lo MAX.
CONTINUO
DC OPERATION
Te = 25°C
COLLECTOR CURRENT 10 (A)
ik. SINGLE NONREPETITIVE
PULSE Tc = 25°C
30 m CURVES MUST BE
DERATED LINEARLY WITH
INCREASE IN
TEMPERATURE. VCEO MAX.
1 3 1 0 30 1 00 300 1 000
COLLECTOR-EMITTER VOLTAGE VCE (V)
1999-09-02 4/4
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