2SC5142 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV, HIGH SPEED SWITCHING APPLICATIONS2SC5142HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit in mmDISPLAY, COLOR TVHIGH SPEED SWITC ..
2SC5142 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV, HIGH SPEED SWITCHING APPLICATIONS2SC5142HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit in mmDISPLAY, COLOR TVHIGH SPEED SWITC ..
2SC5143 ,Silicon NPN Power Transistors TO-3P(H)IS packageAPPLICATIONS m_+_r all CY gl, ELc,High Voltage : VCBO = 1700VLow Saturation Voltage : VCE (sat) = 3 ..
2SC5144 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV, HIGH SPEED SWITCHING APPLICATIONSAPPLICATIONS 20.5MAX. 3.3t.0.2 _o.Eil-iii'- TT'1 (N T 1 'Nee Im x . A L?. nlgn wpeeu : tf = 0.10 ps ..
2SC5145 ,Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)Absolute Maximum Ratings (T =25˚C)n C13 22:Collector3:EmitterParameter Symbol Ratings UnitN Type P ..
2SC5147 , TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE
2SK3919 ,SWITCHING N-CHANNEL POWER MOSFETDATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3919SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERI ..
2SK3919 ,SWITCHING N-CHANNEL POWER MOSFETapplications such as DC/DC converter with synchronous rectifier. (TO-251)
2SK3919-ZK ,SWITCHING N-CHANNEL POWER MOSFETfeatures a low on-state resistance and excellent switching 2SK3919 TO-251 (MP-3) characteristics, a ..
2SK3934 ,MOSFET 2SK/2SJ SeriesThermal Characteristics Characteristics Symbol Max Unit 2 Thermal resistance, channel to case R 2.5 ..
2SK3934. ,MOSFET 2SK/2SJ SeriesApplications Unit: mm • Low drain-source ON resistance: R = 0.23 (typ.) DS (ON)• High forward tra ..
2SK3935 ,Power MOSFET (N-ch 250V<VDSS≤500V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 450 V ..
2SC5142
TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV, HIGH SPEED SWITCHING APPLICATIONS
TOSHIBA 2SC5142
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
ZSCSTIQLZ
HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit in mm
DISPLAY, COLOR TV
HIGH SPEED SWITCHING APPLICATIONS 20.5MAX.
q High Voltage : VCBO = 1500V
0 Low Saturation Voltage : VCE (sat) = 3 V (Max.)
0 High Speed : tf = 0.15 gs (Typ.)
MAXIMUM RATINGS (Ta = 25°C)
20.0:06 26.
CHARACTERISTIC SYMBOL RATING UNIT 5.45 , 0.15 5.45 , 0.15
Collector-Base Voltage VCBO 1500 V 33 g
Collector-Emitter Voltage VCEO 600 V 'li,'. 1’3 33 Cl
Emitter-Base Voltage VEBO 5 V cr. " sva)(t _
I 20 1 2 3
Collector Current DC f, 40 A 1. BASE
Pulse CP 2. COLLECTOR(HEAT SINK)
Base Current 1B 10 A 3. EMITTER
Collector Power Dissipation
JEDEC -
(Te = 25°C) PC 200 W EIAJ
Junction Temperature Tj 150 "C -
Storage Temperature Range Tstg -55--150 "C TOSHIBA 2-21F2A
Weight : 9.75g (Typ.)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 1500 V, IE = 0 - - 1 mA
Emitter Cut-off Current IEBO VEB = 5V, IC = 0 - - 10 pA
Collector-Emitter Breakdown
Voltage V (BR) CEO 10 - 10 mA, IB - 0 600 - - V
. hFE (1) VCE = 5V, 1C = 2A 10 - 30
DC Current Gain hFE (2) VCE = 5V, IC = 14A 4.5 - 8.5 -
Collector-Emitter Saturation
Voltage VCE (sat) IC - 14 A, 1B - 3.5A - - 3 V
Base-Emitter Saturation - -
Voltage VBE (sat) IC - 14 A, IB - 3.5A - 1.0 1.4 V
Transition Frequency fT VCE = 10V, IE = 0.1 A - 1.7 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = o, f = 1 MHz - 290 - pF
Switching Storage Time tstg ICP = 10A, 1BI (end) = 1.8A - 2.5 4.0 S
Time (Fig.1) Fall Time tf fH = 64 kHz - 0.15 0.3 /t
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the ap Iications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights D the third parties which may result from its use. No license is granted
, implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 T e information contained herein is subject to change without notice.
1999-09-02 1/4
TOSHIBA 2SC5142
Fig.1 SWITCHING TIME TEST CIRCUIT
2SK528
INPUT m i:
g, g' '
7 8 ps LO N d
[ Ly = 93 pH i,
15.6 #s VDD Cy = 8500 pF VCC
BASE CURRENT
Base Current Gradient
COLLECTOR CURRENT
IBl + IB2
dIB / dt =
(A / ps)
(Note) .' Leakage Inductance of secondary winding LB is 1.2 pH
1999-09-02 2/4
TOSHIBA
2SC5142
DC CURRENT GAIN hFE COLLECTOR CURRENT 10 (A)
COLLECTOR CURRENT 1C (A)
IC - VCE
COMMON
EMITTER
Tc = 25°C
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
hFE - IC
Tc = 100''C
COMMON EMITTER
VCE = 5 V
0.01 0.03 0.1 0.3 1 3 10
COLLECTOR CURRENT IC (A)
IC - VBE
COMMON EMITTER
VCE = 5V
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE- IB
1C = 16A COMMON
EMITTER
Tc = -25T
2 3 4 5 6
BASE CURRENT IB (A)
VCE - IE
10 12 14 =16A COMMON
EMITTER
Te = 25°C
2 3 4 5 6
BASE CURRENT IB (A)
VC E - IB
COMMON
EMITTER
Te = 100°C
2 3 4 5 6
BASE CURRENT IB (A)
1999-09-02 3/4
TOSHIBA
2SC5142
rth (i-e) - tw
Tc = 25°C (INFINITE HEAT
CURVE SHOULD BE APPLIED
IN THERMAL LIMITED AREA
(SINGLE NONREPETITIVE
PULSE)
TRANSIENT THERMAL IMPEDANCE
(JUNCTION-CASE) rm“) (°C/W)
0.1m 1m 10m 0.1 1 10 100
PULSE WIDTH tw (s)
SAFE OPERATING AREA
30 IC MAX.(PULSED) msy.4 100 pes)K.
IC MAX. 0 msX
10 (CONTINUOUS)
5 100 msX
DC OPERATION
Tc = 25°C
COLLECTOR CURRENT 10 (A)
X SINGLE NONREPETITWE
50 m PULSE Te = 25°C
30m CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE. VCEO MAX.
1 3 10 30 100 300 1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR POWER DISSIPATXON PC (W)
PC - Te
INFINITE HEAT SINK
0 25 50 75 100 125 150
CASE TEMPERATURE Te (°C)
1999-09-02 4/4
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