2SC5129 ,Silicon NPN Power Transistors TO-3P(H)IS packageAPPLICATIONS 15.5:05 03.6:03, 3.0i0.3i'z, o- TT- T H T n n "e Im x O . O 9 L0 -lnlgn wpeeu : tf = 0 ..
2SC5130 , Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
2SC5130 , Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
2SC5142 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV, HIGH SPEED SWITCHING APPLICATIONS2SC5142HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit in mmDISPLAY, COLOR TVHIGH SPEED SWITC ..
2SC5142 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV, HIGH SPEED SWITCHING APPLICATIONS2SC5142HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit in mmDISPLAY, COLOR TVHIGH SPEED SWITC ..
2SC5143 ,Silicon NPN Power Transistors TO-3P(H)IS packageAPPLICATIONS m_+_r all CY gl, ELc,High Voltage : VCBO = 1700VLow Saturation Voltage : VCE (sat) = 3 ..
2SK3900 ,SWITCHING N-CHANNEL POWER MOSFETFEATURES • Super low on-state resistance (TO-263) RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 41 A) ..
2SK3903 ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 600 V ..
2SK3905 , Silicon N-Channel MOS Type
2SK3911 ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 600 V ..
2SK3918 ,SWITCHING N-CHANNEL POWER MOSFETDATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3918SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERI ..
2SK3918-ZK ,SWITCHING N-CHANNEL POWER MOSFETfeatures a low on-state resistance and excellent switching 2SK3918 TO-251 (MP-3) characteristics, a ..
2SC5129
Silicon NPN Power Transistors TO-3P(H)IS package
TOSHIBA 2SC5129
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC51129
HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION
Unit in mm
DISPLAY, COLOR TV
HIGH SPEED SWITCHING APPLICATIONS 15510.5 sores
. o o - F
o High Speed : tf= 0.15 ,us (Typ.) . q ut
o High Voltage : VCBO = 1500V N 'il
0 Low Saturation Voltage : VCE (sat) = 3 V (Max.) i
0 Collector Metal (Fin) is Fully Covered with Mold Resin
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT 'ii'
Collector-Base Voltage VCBO 1500 V ll
Collector-Emi; Voltage VCEO 600 V
. - l. BASE
Emitter Base Voltage DC IVEBO 13 V 2. COLLECTOR
Collector Current C A 3. EMITTER
Pulse ICP 20
JEDEC -
Base Current IB 5 A
Collector Power Dissipation P 50 W EIAJ -
(Tc = 25°C) C TOSHIBA 2-16E3A
Junction Temperature Tj 150 "C Weight : 5.5 g (Typ.)
Storage Temperature Range Tstg -55-150 "C
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 1500 V, IE = 0 - - 1 mA
Emitter Cut-off Current IEBO VEB = 5V, IC = 0 - - 10 pA
Emitter-Base Breakdown
Voltage V (BR) CEO 10 - 10 mA, IB - 0 600 - - V
. hFE (1) VCE = 5V, IC = IA 10 - 30
C Current Gain hFE (2) VCE = 5V, 1C = 6 A 4 - 8
Collector-Emitter Saturation
Voltage VCE (sat) 1C - 6A, 1B - 1.5A - - 3 V
Base-Emitter Saturation - -
Voltage VBE (sat) IC - 6A, IB - 1.5A - 1.0 1.4 V
Transition Frequency fT VCE = 10V, IC = 0.1 A - 1.7 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = o, f = 1 MHz - 135 - pF
Switching Storage Time tstg ICP = 5 A, 1B1 (end) = 1 A - 2.5 4.0 s
Time (Fig.1) Fall Time tf fH = 64 kHz - 0.15 0.3 /t
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity _apd.yulrysrabyity t9 physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the apflications of o_ur products. No responsibility is assumed by. TOSHIBA
CORPORATION for any infringements of intellectual property or other rights D the third parties which may result from its use. No license IS granted
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
1999-09-02 1/4
TOSHIBA 2SC5129
Fig.1 SWITCHING TIME TEST CIRCUIT(Inductive Load)
2SK528 (Note)1.0pH 4v.'y/a'
2000pF 2-4k
0.022“?
7.8 [us g
Ly = 130 pH i
15.6 /rs VDD Cy = 6800 pF VCC
(Note) : Leakage Inductance of secondary winding LB is 1.2 pH.
BASE CURRENT
COLLECTOR CURRENT
Base Current Gradient
dl /dt =
B tstg
1999-09-02 2/4
TOSHIBA
2SC5129
Ic (A)
COLLECTOR CURRENT
DC CURRENT GAIN hm;
10 (A)
COLLECTOR CURRENT
IC - VCE
COMMON
EMITTER
Tc = 25°C
2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
hFE - IC
COMMON EMITTER
VCE = 5 V
Tc = 100°C
0.01 0.03 0.1 0.3 l 3 10 30
COLLECTOR CURRENT 1C (A)
IC - VBE
COMMON EMITTER
VCE = 5 V
Tc = 100°C
0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR-EMITTER VOLTAGE VCE
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER, VOLTAGE VCE
VCE - IB
COMMON
EMITTER
Tc = -25"C
0.8 1.2 1.6 2.0 2.4
BASE CURRENT 113 (A)
VCE - IB
COMMON
EMITTER
Tc = 25°C
0.8 1.2 1.6 2.0 2.4
BASE CURRENT 1B (A)
VCE - IB
COMMON
EMITTER
Tc = 100°C
0.8 1.2 1.6 2.0 2.4
BASE CURRENT IB (A)
1999-09-02 3/4
TOSHIBA
2SC5129
TRANSIENT THERMAL IMPEDANCE
(JUNCTION-CASE) rm“) (°C/W)
Ic (A)
COLLECTOR CURRENT
rth (i-e) - tw
Tc = 25''C (INFINTE HEAT SINK)
CURVE SHOLD BE APPLIED IN THERMAL
LIMITED AREA
(SINGLE NONREPRTITIVE PULSE)
1m 10m 0.1 1 10 100 1000
PULSE WIDTH tw (s)
SAFE OPERATING AREA
l l l l l I lll l , 10 X Hi
IC MAX. (PULSED) ).r'd. l As .
I I I I I _ 100 5%
IC ng. .y.,:.N, 'N \1m5N l ’u
(PUL ED)).t.
t t I sl "c, 'cs N
10 MAX. N N \ \ ,
(CONTINUOUS) N, N \
\ l 10 msX \
"N, l N 'N, N
DC OPERATION I I .
Te = 25°C , 100 msX _
l s, N
t sCs,
y.T. SINGLE NONREPETITIVE "s,
PULSE Ta = 25°C N. 'N
CURVES MUST BE DERATED N
LINEARLY WITH INCREASE IN V
TEMPERATURE. VCEO MAX}
1 3 10 30 100 300 1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
INFINITE HEAT SINK
COLLECTOR POWER DISSIPATION
PC (W)
0 20 40 60 80 100 120 140 160
CASE TEMPERATURE Tc (°C)
1999-09-02 4/4
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