2SC5122 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. HIGH VOLTAGE SWITCHING APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITomectorcut-ofrcurren ..
2SC5129 ,Silicon NPN Power Transistors TO-3P(H)IS packageAPPLICATIONS 15.5:05 03.6:03, 3.0i0.3i'z, o- TT- T H T n n "e Im x O . O 9 L0 -lnlgn wpeeu : tf = 0 ..
2SC5130 , Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
2SC5130 , Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
2SC5142 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV, HIGH SPEED SWITCHING APPLICATIONS2SC5142HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit in mmDISPLAY, COLOR TVHIGH SPEED SWITC ..
2SC5142 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV, HIGH SPEED SWITCHING APPLICATIONS2SC5142HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit in mmDISPLAY, COLOR TVHIGH SPEED SWITC ..
2SK3899 ,SWITCHING N-CHANNEL POWER MOSFETFEATURES • Super low on-state resistance (TO-263) RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 42 A) ..
2SK3900 ,SWITCHING N-CHANNEL POWER MOSFETFEATURES • Super low on-state resistance (TO-263) RDS(on)1 = 8.0 mΩ MAX. (VGS = 10 V, ID = 41 A) ..
2SK3903 ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 600 V ..
2SK3905 , Silicon N-Channel MOS Type
2SK3911 ,Power MOSFET (N-ch 500V<VDSS≤700V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 600 V ..
2SK3918 ,SWITCHING N-CHANNEL POWER MOSFETDATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3918SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERI ..
2SC5122
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. HIGH VOLTAGE SWITCHING APPLICATIONS
TOSHIBA 2SC5122
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE
2SC51i22
HIGH VOLTAGE SWITCHING APPLICATIONS Unit in mm
5.1 MAX.
0 High Voltage : VCE0=400V t'
0 Low Saturation Voltage g
: VCE (sat)=0.4V (Typ.) (10:20mA, IB=0.5mA)
MAXIMUM RATINGS (Ta=25°C) 2 2
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 400 V x-
Collector-Emi; Voltage VCEO 400 V E
Emitter-Base Voltage VEBO 7 V 4- 4M , it
DC I 50 1. EMITTER t
Collector Current C mA 2. COLLECTOR
Pulse ICP 100 3. B ASE
Base Current IB 25 mA JEDEC TO-92MOD
Collector Power Dissipation PC 900 mW JEIT A -
J unetion Temperature Tj 150 C TOSHIB A 2- 5J1 A
Storage Temperature Range Tstg -55--150 C Weight : 0.36g (Typ.)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 400V, IE = 0 - - 1 PA
Emitter Cut-off Current IEBO VEB = 7V, IC = 0 - - 1 PA
Collector-Emitter Breakdown
Voltage VCEO IC - 1mA, IB - O 400 - - V
h V = 5V, I = 1 A 80 - -
DC Current Gain FE (1) CE C m
hFE (2) VCE = 5V, IC = 20mA 100 - 300
Collector-Emitter Saturation
Voltage VCE (sat) 1C - 20mA, 1B - 0.5mA - 0.4 1.0
Base-Emitter Voltage VBE VCE = 5V, IC = 20mA - 0.7 1.0 V
Collector Output Capacitance Cob VCB = 10V, IE = o, f = 1MHz - 4 - pF
1 2001-11-05
TOSHIBA
2SC5122
IC - VCE
lmA 900800700 600 500
0 COMMON
IB --50MA EMITTER
Ta = 25''C
0 2 4 6 8 10
C0LLEcT0R-EMITTER VOLTAGE VCE (V)
VCE (sat) - IC
COMMON
EMITTER
IC/IB =5
160 Ta= 100°C
120 25
VOLTAGE VCE (sat) (mV)
CO LLECTOR-EMITTER SATURATION
0 10 20 30 40 50
COLLECTOR CURRENT 1C (mA)
COLLECTOR POWER DISSIPATXON
PC (W)
0 4O 80 120 160 200 240
AMBIENT TEMPERATURE Ta (°C)
DC CURRENT GAIN hFE
COLLECTOR CURRENT 10 (mA)
10 (A)
COLLECTOR CURRENT
hFE - IC
30 Ta-- 100°C
COMMON
EMITTER
VCE = 10V
0.1 1 10 100
COLLECTOR CURRENT 10 (mA)
IC - VBE
COMMON
EMITTER
VCE = 10v
Ta =100°C 25
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE-EMITTER VOLTAGE VBE (V)
SAFE OPERATING AREA
IC MAX.(PULSED) .)K. ImsW. .
100 1 11111111 _ tIrs “10°#S>'<3
IC MAX.(CONTINUOUS) \ _ \
50 1 1 1 1111 'k N
30 1 111111 l \
DC OPERATION N \ h,
Ta=25°C 'N AN:"
10 I . 5 k
100msy.C \III N
5 i 10ms.2f "s,. ',
3 X SINGLE
NONREPETITIVE
PULSE Ta=25°C
CURVES MUST BE
1 DERATED LINEARLY
WITH INCREASE IN =--VCEO MAX.
TEMPERATURE. ---; Ill 1 I
1 3 10 30 100 300 1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
TOSHIBA 2SC5122
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-11-05
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