2SC5089 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 13dB (f = 1 GHz) 21e ..
2SC5090 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 13dB (f = 1 GHz) 21e ..
2SC5092 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.8dB, |S | = 9.5dB (f = 2 GHz) 21 ..
2SC5094 ,Dual Inverter (open drain) with 3.6 V Tolerant Input and OutputApplications Unit: mm Low noise figure, high gain. 2 NF = 1.8dB, |S | = 7.5dB (f = 2 GHz) 21 ..
2SC5095 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.8dB, |S | = 7.5dB (f = 2 GHz) 21 ..
2SC5095-O , VHF~UHF Band Low Noise Amplifier Applications
2SK3793 ,SWITCHING N-CHANNEL POWER MOSFETDATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3793SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERIN ..
2SK3794-Z ,SWITCHING N-CHANNEL POWER MOSFETFEATURES • Low On-state resistance (TO-251) RDS(on)1 = 44 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on ..
2SK3797 ,MOSFET 2SK/2SJ SeriesThermal Characteristics Characteristics Symbol Max Unit 2 Thermal resistance, channel to case R 2.6 ..
2SK3797. ,MOSFET 2SK/2SJ SeriesApplications Unit: mm • Low drain-source ON resistance: R = 0.32 (typ.) DS (ON)• High forward tr ..
2SK3798 ,MOSFET 2SK/2SJ SeriesApplications Unit: mm • Low drain-source ON resistance: R = 2.5Ω (typ.) DS (ON)• High forward tra ..
2SK3799 ,MOSFET 2SK/2SJ SeriesThermal Characteristics Characteristics Symbol Max Unit 2 Thermal resistance, channel to case R (2. ..
2SC5089
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications
2SC5089 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5089 VHF~UHF Band Low Noise Amplifier Applications Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz)
Maximum Ratings (Ta ��� � 25°C)
Microwave Characteristics (Ta ��� � 25°C)
�S21e�2 (1) VCE � 8 V, IC � 5 mA, f � 2 GHz
Electrical Characteristics (Ta ��� � 25°C) Cre VCB � 10 V, IE � 0, f � 1 MHz (Note 2)
Note 1: hFE classification R: 50~100, O: 80~160
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Unit: mm
Weight: 0.012 g (typ.)
