2SC5086 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 11dB (f = 1 GHz) 21e ..
2SC5086FT-Y , VHF~UHF Band Low Noise Amplifier Applications
2SC5088 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 13dB (f = 1 GHz) 21e ..
2SC5089 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 13dB (f = 1 GHz) 21e ..
2SC5090 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 13dB (f = 1 GHz) 21e ..
2SC5092 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.8dB, |S | = 9.5dB (f = 2 GHz) 21 ..
2SK3755 ,SWITCHING N-CHANNEL POWER MOSFETDATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3755SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERIN ..
2SK3756 ,Radio-frequency power MOSFETElectrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitOutput ..
2SK3757 ,Power MOSFET (N-ch 250V<VDSS≤500V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 450 V ..
2SK3761 ,MOSFET 2SK/2SJ SeriesApplications 4.7 max4.7 max 10.5 max 10.5 max 3.84 0.2 1.3 3.84 0.2 1.3 • Low drain-source ON r ..
2SK3767 ,MOSFET 2SK/2SJ SeriesThermal Characteristics Characteristics Symbol Max Unit2Thermal resistance, channel to case R 5.0 ° ..
2SK3773-01MR , N-CHANNEL SILICON POWER MOSFET
2SC5086
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications
2SC5086 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5086 VHF~UHF Band Low Noise Amplifier Applications Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz)
Maximum Ratings (Ta ��� � 25°C)
Microwave Characteristics (Ta ��� � 25°C) VCE � 10 V, IC � 5 mA, f � 1 GHz
Electrical Characteristics (Ta ��� � 25°C)
Note 1: hFE classification O: 80~160, Y: 120~240
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Unit: mm
Weight: 2.4 mg (typ.)
