2SC5075 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONSAPPLICATIONS0 High Speed Switching: tr-- 1.0ps (Max.), tf= 1.0ps (Max.)0 High Collector Breakdown V ..
2SC5081 , Silicon NPN Epitaxial
2SC5081 , Silicon NPN Epitaxial
2SC5084 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 11dB (f = 1 GHz) 21e ..
2SC5086 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 11dB (f = 1 GHz) 21e ..
2SC5086FT-Y , VHF~UHF Band Low Noise Amplifier Applications
2SK3742 ,Power MOSFET (N-ch 700V<VDSS)Thermal Characteristics 2Characteristic Symbol Max UnitThermal resistance, channel to case R 2.78 ° ..
2SK3747 ,N-Channel Power MOSFET, 1500V, 2A, 13Ohm, TO-3PF-3LAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SK3749 ,Nch enhancement type MOS FETDATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3749N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHIG PACKAGE D ..
2SK375 , HIGH SPEED POWER SWITCHING
2SK375 , HIGH SPEED POWER SWITCHING
2SK3755 ,SWITCHING N-CHANNEL POWER MOSFETDATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3755SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERIN ..
2SC5075
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS
TOSHIBA
2SC5075
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE
2SC5075
SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING
APPLICATIONS
HIGH SPEED DC-DC CONVERTER APPLICATIONS
0 High Speed Switching
: tr=1.0ps (Max.), tf=1.0,us (Max.)
0 High Collector Breakdown Voltage : VCE0=400V
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 500 V
Collector-Emi) Voltage VCEO 400 V It
Emitter-Base Voltage VEBO 7 V -t'M.
Collector Current IC 2 A -
Base Current IB 0.5 A so ‘2 l. EMITTER
Collector Power Dissipation PC 1.3 W i 2g"TOR
J unction Temperature Tj 150 "C
o JEDEC -
Storage Temperature Range Tstg -55--150 C
JEITA -
TOSHIBA 2-8M1A
ELECTRICAL CHARACTERISTICS (Ta =25°C) Weight .' 0.55g (Typ.)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=400V, IE=O - - 100 PA
Emitter Cut-off Current IEBO VEB=7V, IC=0 - - 1 mA
Collector-Base Breakdown
Voltage V (BR) CBO IC - 1mA, IE - 0 500 - - V
Collector-Emi; Breakdown - -
Voltage V (BR) CEO 1C - lOmA, IB - O 400 - - V
. hFE (1) VCE = 5V, IC =0.1A 20 - -
DC Current Gain hFE (2) VCE-- 5V, IC=IA 8 - -
Saturation Collector-Emitter VCE (sat) IC = IA, IB =0.2A - - 1.0 V
Voltage Base-Emitter VBE (sat) IC = IA, IB = 0.2A - - 1.5
Rise Time tr 22:5 IBI OUTPUT - - 1.0
Switching St ra Tim t 1B1 FEINPUT 1,T, g - - 2 5 S
Time o ge e stg I132 B2 £ . '
. IBI = -1B2 =0.08A u-
Fall Time tf DUTY CYCLE<1% VCC .200V - - 1.0
TOSHIBA
DC CURRENT GAIN hFE COLLECTOR CURRENT 10 (A)
BASE-EMITTER SATURATION VOLTAGE
VBE (sat) (V)
IC - VCE
COMMON
EMITTER
Ta = 25''C
0 2 4 6 8 10 12 14 16
c0LLEcT0RaMITTER VOLTAGE VCE (V)
hFE - 10
COMMON EMITTER
VCE = 5V
0.01 0.03 0.1 0.3 1 3 10
COLLECTOR CURRENT IC (A)
VBE (sat) - IC
COMMON EMITTER
10/IB=5
Ta = - 55°C
0.005 0.01 0.03 0.1 0.3 1 3 10
COLLECTOR CURRENT IC (A)
T ~EM1TTERSATURATION
COLLI€’%I?P§1GE VCE(Sat) (V) COLLECTOR CURRENT 10 (A)
COLLECTOR POWER DISSIPATION
PC (W)
2SC5075
IC - VBE
COMMON EMITTER
VCE = 5V
Ta = 100°C 25
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE-EMITTER VOLTAGE VBE (V)
VCE (sat) - IC
COMMON EMITTER
IC/IB = 5
0.005 0.01 0.03 0.1 0.3 1 3 10
COLLECTOR CURRENT IC (A)
o 25 50 75 100 125 150 175
AMBIENT TEMPERATURE Ta (''C)
TOSHIBA
COLLECTOR CURRENT 10 (A)
rth - tw
CURVES SHOULD BE APPLIED IN THERMAL LIMITED AREA.
500 (SINGLE NONREPETITIVE PULSE) Ta=25°c
rth (°C/W)
TRANSIENT THERMAL RESISTANCE
0.001 0.01 0.1
PULSE WIDTH tw (s)
SAFE OPERATING AREA
IC MAX.(PULSED) .)k.
IC MAX.
(CONTINUOUS)
100ms.2f
DC OPERATION
0.1 Ta =25°c
X SINGLE NONREPETITIVE
PULSE Ta=25°C
0.003 CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE. VCEO MAX.
0.3 1 3 10 30 100 300 1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
2SC5075
TOSHIBA 2SC5075
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
4 2001-11-05
:
www.loq.com
.
