2SC5064 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 12dB (f = 1 GHz) 21e ..
2SC5065 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 12dB (f = 1 GHz) 21e ..
2SC5066 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 12dB (f = 1 GHz) 21e ..
2SC5069 ,NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier, Driver ApplicationsFeatures Package Dimensions · High current capacity.unit:mm · Adoption of MBIT process.2038A · High ..
2SC5069 ,NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier, Driver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC5070 ,NPN Epitaxial Planar Silicon TransistorAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SK369-BL , For Low Noise Audio Amplifier Applications
2SK3700 ,Power MOSFET (N-ch 700V<VDSS)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage V 900 ..
2SK3702 ,High Output MOSFETsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SK3702JS , N-Channel Silicon MOSFET General-Purpose Switching Device
2SK3702JS , N-Channel Silicon MOSFET General-Purpose Switching Device
2SK3703 ,High Output MOSFETsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SC5064
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications
2SC5064 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5064 VHF~UHF Band Low Noise Amplifier Applications Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz)
Maximum Ratings (Ta ��� � 25°C)
Microwave Characteristics (Ta ��� � 25°C) VCE � 5 V, IC � 3 mA, f � 1 GHz
Electrical Characteristics (Ta ��� � 25°C)
Note 1: hFE classification O: 80~160, Y: 120~240
Unit: mm
Weight: 0.012 g (typ.)
