2SC5048 ,Silicon NPN Power Transistors TO-3P(H)IS packageAPPLICATIONS 15.5:05 03.6:03, 3.0i0.3i'z, o- TT- T wr 1. wr "eftf't wr O . O 9 L0 -lnlgn voltage : ..
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2SC5048
Silicon NPN Power Transistors TO-3P(H)IS package
TOSHIBA 2SC5048
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5048
HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION
Unit in mm
DISPLAY, COLOR TV
HIGH SPEED SWITCHING APPLICATIONS 15510.5 3.0i03
. o o - F
o High Voltage : VCBO = 1500V . q ut
0 Low Saturation Voltage : VCE (sat) = 3 V (Max.) N 'il
x'G cu
0 High Speed : tf = 0.15 ,us (Typ.)
0 Collector Metal (Fin) is Fully Covered with Mold Resin.
((IS) Package)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT 'ii'
Collector-Base Voltage VCBO 1500 V ll
Collector-Emi; Voltage VCEO 600 V
. - l. BASE
Emitter Base Voltage DC IVEBO 1: V 2. COLLECTOR
Collector Current C A 3. EMITTER
Pulse ICP 24
JEDEC -
Base Current IB 6 A
Collector Power Dissipation P 50 W EIAJ -
(Tc = 25°C) C TOSHIBA 2-16E3A
Junction Temperature Tj 150 "C Weight : 5.5 g (Typ.)
Storage Temperature Range Tstg -55-150 "C
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 1500 V, IE = 0 - - 1 mA
Emitter Cut-off Current IEBO VEB = 5V, IC = 0 - - 10 pA
Collector-Emir Breakdown
Voltage V (BR) CEO 10 - 10 mA, IB - 0 600 - - V
. hFE (1) VCE = 5V, IC = IA 10 - 30
C Current Gain hFE (2) VCE = 5V, 1C = 8 A 4 - 8
Collector-Emitter Saturation
Voltage VCE (sat) IC - 8A, IB - 2A - - 3 V
Base-Emitter Saturation - -
Voltage VBE (sat) IC - 8A, IB - 2A - 1.0 1.4 V
Transition Frequency fT VCE = 10V, IE = 0.1 A - 1.7 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = o, f = 1 MHz - 160 - pF
Switching Storage Time tstg ICP = 6A, IBI (end) = 1.15 A - 2.5 4.0 S
Time (Fig.1) Fall Time tf fH = 64 kHz - 0.15 0.3 /t
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity _apd.yulrysrabyity t9 physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the apflications of o_ur products. No responsibility is assumed by. TOSHIBA
CORPORATION for any infringements of intellectual property or other rights D the third parties which may result from its use. No license IS granted
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
1999-09-02 1/4
TOSHIBA 2SC5048
Fig.1 SWITCHING TIME TEST CIRCUIT
2SK528
INPUT m i:
g, 2 o
7.8/s LO N d
[ Ly = 120 pdl i,
15.6 #s VDD Cy = 7500 pF VCC
BASE CURRENT
COLLECTOR
CURRENT
Base Current Gradient
dIB/dt= 1B1t,l-es1B2 (A/ps)
(Note) : Leakage Inductance of secondary winding LB is 1.2 pm.
1999-09-02 2/4
TOSHIBA
2SC5048
COLLECTOR CURRENT [C (A)
DC CURRENT GAIN hFE
COLLECTOR CURRENT 10 (A)
IC - VCE
COMMON EMITTER
Te = 25°C
IB =0.1A
0 2 4 6 8 10
CoLLECToRaMITTER VOLTAGE VCE (V)
hFE - IC
COMMON
EMITTER
VCE = 5 v
0.01 0.03 0.1 0.3 1 3 10 30
COLLECTOR CURRENT IC (A)
IC - VBE
COMMON EMITTER
10 VCE = 5 V
Te = 100°C
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE - IB
COMMON
EMITTER
Te = -25'C
Ic=11A
0.8 1.6 2.4 3.2 4.0
BASE CURRENT IB (A)
VCE - IB
COMMON
EMITTER
Te = 25°C
IC=11A
0.8 1.6 2.4 3.2 4.0
BASE CURRENT IB (A)
VCE - IB
COMMON
EMITTER
Te = 100''C
10 Ic=11A
0.8 1.6 2.4 3.2 4.0
BASE CURRENT IB (A)
1999-09-02 3/4
TOSHIBA 2SC5048
rth(i-e) - tw PC - Te
INFINITE HEAT SINK
Tc = 25°C (INFINITE HEAT SINK)
CURVE SHOULD BE APPLIED IN
THERMAL LIMITED AREA
(SINGLE NONREPETITIVE PULSE)
TRANSIENT THERMAL IMPEDANCE
(JUNCTION- CASE) rth (M 60 / W)
COLLECTOR POWER DISSIPATXON PC (W)
1m 10m 0.1 1 10 100 1000 0 20 40 60 80 100 120 140 160
PULSE WIDTH tw (s) CASE TEMPERATURE Tc (°C)
SAFE OPERATING AREA
IC MAX. (PULSED)M
1C MAX. (PU1SED)M
IC MAX.
(CONTINUOUS)
DC OPERATION
Te = 25°C
I I I I I I
100 msik
10msyd.
COLLECTOR CURRENT 10 (A)
).K SINGLE NONREPETITIVE
PULSE Tc = 25°C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE. VCEO MAX.
1 3 10 30 100 300 1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
1999-09-02 4/4
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