2SC5012 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLDXYZDATA SHEETSILICON TRANSISTOR2SC5012HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIA ..
2SC5012-T1 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLDXYZDATA SHEETSILICON TRANSISTOR2SC5012HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIA ..
2SC5013 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLDXYZDATA SHEETSILICON TRANSISTOR2SC5013HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIA ..
2SC5013-T1 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLDXYZDATA SHEETSILICON TRANSISTOR2SC5013HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIA ..
2SC5014-T1 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLDDATA SHEETSILICON TRANSISTOR2SC5014HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL ..
2SC5015 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLDT83DATA SHEETSILICON TRANSISTOR2SC5015HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIA ..
2SK363 ,N-Channel silicon junction field-effect transistorApplications High breakdown voltage: V = −40 V GDS High input impedance: I = −1.0 nA (max) ..
2SK3635-Z ,SWITCHING N-CHANNEL POWER MOSFETFEATURES • High voltage: VDSS = 200 V • Gate voltage rating: ±30 V • Low on-state resistance RDS(o ..
2SK3636 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitDrain-source ..
2SK3637 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitGate-drain s ..
2SK3638 ,SWITCHING N-CHANNEL POWER MOSFETfeatures a low PART NUMBER PACKAGE on-state resistance and excellent switching characteristics, an ..
2SK3639 ,SWITCHING N-CHANNEL POWER MOSFETfeatures a low on-state resistance and excellent switching 2SK3639-ZK characteristics, and designed ..
2SC5012-2SC5012-T1
