2SC5010-T1 ,NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLDDATA SHEETSILICON TRANSISTOR2SC5010NPN SILICON EPITAXIAL TRANSISTOR3 PINS ULTRA SUPER MINI ..
2SC5011 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLDXYZDATA SHEETSILICON TRANSISTOR2SC5011HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIA ..
2SC5011-T1 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLDXYZDATA SHEETSILICON TRANSISTOR2SC5011HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIA ..
2SC5012 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLDXYZDATA SHEETSILICON TRANSISTOR2SC5012HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIA ..
2SC5012-T1 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLDXYZDATA SHEETSILICON TRANSISTOR2SC5012HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIA ..
2SC5013 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLDXYZDATA SHEETSILICON TRANSISTOR2SC5013HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIA ..
2SK3615 , General-Purpose Switching Device Applications
2SK3617 ,Medium Output MOSFETsOrdering number : ENN8112 2SK3617N-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3617App ..
2SK3628 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitGate-drain s ..
2SK363 ,N-Channel silicon junction field-effect transistorApplications High breakdown voltage: V = −40 V GDS High input impedance: I = −1.0 nA (max) ..
2SK3635-Z ,SWITCHING N-CHANNEL POWER MOSFETFEATURES • High voltage: VDSS = 200 V • Gate voltage rating: ±30 V • Low on-state resistance RDS(o ..
2SK3636 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitDrain-source ..
2SC5010-2SC5010-T1
