2SC4955 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDDATA SHEETSILICON TRANSISTOR2SC4955HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL ..
2SC4955-T1 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDDATA SHEETSILICON TRANSISTOR2SC4955HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL ..
2SC4957 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLDDATA SHEETSILICON TRANSISTOR2SC4957HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL ..
2SC4958-T1 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLDFEATURESPACKAGE DIMENSIONS• Low Noise, High Gainin millimeters• Low Voltage Operation2.1 ± 0.1• Low ..
2SC4959 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLDFEATURESPACKAGE DIMENSIONS• Low Noise, High Gainin millimeters• Low Voltage Operation2.1 ± 0.1• Low ..
2SC4959-T1 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLDELECTRICAL CHARACTERISTICS (TA = 25 °C)CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONColl ..
2SK3568.. ,Power MOSFET (N-ch 250V<VDSS≤500V)absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semi ..
2SK3569 ,MOSFET 2SK/2SJ SeriesThermal Characteristics Characteristics Symbol Max Unit 2 Thermal resistance, channel to case R 2.7 ..
2SK3569. ,MOSFET 2SK/2SJ SeriesApplications Unit: mm • Low drain-source ON resistance: R = 0.54 (typ.) DS (ON)• High forward tr ..
2SK357 , HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS
2SK357 , HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS
2SK357. , HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS
2SC4955-2SC4955-T1
