2SC4935 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) . POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC4942 ,High-speed high-voltage switching NPN 3-diffusion transFEATURES• New package with dimensions in between those of smallsignal and power signal package Hig ..
2SC4944 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplefier ApplicationsApplications Unit: mm Small package (dual type) High voltage and high current: V = 50 V, I ..
2SC4954 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDDATA SHEETSILICON TRANSISTOR2SC4954HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL T ..
2SC4955 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDDATA SHEETSILICON TRANSISTOR2SC4955HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL ..
2SC4955-T1 ,HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDDATA SHEETSILICON TRANSISTOR2SC4955HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL ..
2SK3562 ,MOSFET 2SK/2SJ SeriesThermal Characteristics Characteristics Symbol Max Unit2 Thermal resistance, channel to case R 3.12 ..
2SK3563 ,MOSFET 2SK/2SJ SeriesThermal Characteristics Characteristics Symbol Max Unit 2Thermal resistance, channel to case R 3.57 ..
2SK3563.. ,MOSFET 2SK/2SJ SeriesApplications 10±0.3 2.7±0.2 φ3.2±0.2• Low drain-source ON resistance: R = 1.35Ω (typ.) DS (ON)• Hi ..
2SK3564 ,MOSFET 2SK/2SJ SeriesApplications 10±0.3 2.7±0.2 φ3.2±0.2 • Low drain-source ON resistance: R = 3.7 (typ.) DS (ON)• Hi ..
2SK3565 ,MOSFET 2SK/2SJ SeriesThermal Characteristics 2Characteristics Symbol Max Unit Thermal resistance, channel to case R 2.78 ..
2SK3566 ,MOSFET 2SK/2SJ SeriesThermal Characteristics Characteristics Symbol Max Unit 2Thermal resistance, channel to case R 3.12 ..
2SC4935
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) . POWER AMPLIFIER APPLICATIONS
TOSHIBA
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
2SC4935
POWER AMPLIFIER APPLICATIONS
0 Good Linearity of hFE.
MAXIMUM RATINGS (Tc = 25°C)
Complementary to 2SA1869 and 5 Watts Output Applications.
2SC4935
CHARACTERISTIC SYMBOL RATING UNIT 0.75 , 0.15
Collector-Base Voltage VCBO 50 V 2. , 0.2 2.54 t 0.25
Collector-Emi; Voltage VCEO 50 V g 1 2 3 g N
Emitter-Base Voltage VEBO 5 V EE::[§
Collector Current IC 3 A d - d
Base Current IB 0.3 A l. BASE
2. COLLECTOR
fylteto.s.' Power Ta=25°C PC 2.0 W 3. EMITTER
Dissipation Tc = 25°C 10 JEDEC -
J unction Temperature Tj 150 "C JEIT A SC-67
Storage Temperature Range Tstg - 55-- 150 "C TOSHIB A 2-10R1A
ELECTRICAL CHARACTERISTICS (Tc=25°C)
Weight : 1.7g (Typ.)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 50V, IE = 0 - - 1.0 pA
Emitter Cut-off Current IEBO VEB = 5V, 10 = O - - 1.0 PA
Collector-Emi; Breakdown
Voltage V (BR) CEO IC - lOmA, 1B - 0 50 - - V
hFE (1) VCE = 2V, IC = 0.5A 70 - 240
DC Current Gain (Note)
hFE (2) VCE = 2V, IC = 2.5A 30 - -
Collector-Emi) Saturation
Vol tage VCE (sat) IC - 2A, IB - 0.2A - 0.4 0.6 V
Base-Emitter Voltage VBE VCE = 2V, IC = 0.5A - 0.75 1.0 V
Transition Frequency fT VCE = 2V, IC = 0.5A - 80 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz - 30 - pF
(Note) : hFE(1) Classification
o : 70--140, Y : 120--240
TOSHIBA 2SC4935
IC - VCE IC - VBE
COMMON EMITTER
VCE = 2V
Te = 1 00°C
IB=5mA
COLLECTOR CURRENT 10 (A)
COLLECTOR CURRENT 10 (A)
COMMON EMITTER
Tc=25°C
O 2 4 6 8 10 0 0.2 0.4 0.6 0.8 l 1.2 1.4
COLLECTOR-EMITTER VOLTAGE VCE (V) BASE-EMITTER VOLTAGE VBE (V)
hFE - IC VCE (sat) - IC
COLLECTOR—EMITTER SATURATION
.,?) E, Tc = -25T
E 100 a
g > COMMON EMITTER
ad IC/IB= 10
ie 0.01
8 10 0.01 0.1 1 IO
COLLECTOR CURRENT IC (A)
SAFE OPERATING AREA
COMMON EMITTER IO ; ; ; l l ;
VCE=2V :10 MAX.(PULSED) X
0 l I .
0.01 0.1 1 10 1C MAX. C-1msliK'
COLLECTOR CURRENT 10 (A) (CONTINUOUS) k N 10msy.f
PC - Ta s. N N y
co Tc=Ta S.? s, N / " .
z INFINITE HEAT SINK E DC OPERATION\\ N) l 100msiif
ic-j O? NO HEAT SINK g I- T°=250 _ h \ /
E g NN x
- co \ \ L /
a m \ IA" \
Cl g N K N
EE 3 N, ')):,)
8 k? S 't \ \
M Q N N N
o X SINGLE NONREPETITIVE N
t; PULSE Tc=25°C
'3 0.1 CURVES MUST BE DERATED h
g LINEARLY WITH INCREASE
co IN TEMPERATURE.
0 25 50 75 100 125 150 175 200 1 3 5 10 30 50 100
AMBIENT TEMPERATURE Ta (''C) COLLECTOR-EMITTER VOLTAGE VCE (V)
2 2001-11-05
TOSHIBA 2SC4935
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-11-05
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