2SC4931 ,NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier ApplicationsFeatures Package Dimensions · Low noise : NF=1.2dB typ (f=1GHz).unit:mm2 · High gain : ‰ S21e‰ =13d ..
2SC4934 , Silicon NPN Epitaxial
2SC4934E , Silicon NPN Epitaxial
2SC4934E , Silicon NPN Epitaxial
2SC4934-E , Silicon NPN Epitaxial
2SC4935 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) . POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SK3560 ,Silicon N-channel power MOSFET For PDP/For high-speed switchingElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitGate-drain s ..
2SK3561 ,MOSFET 2SK/2SJ SeriesTENTATIVE 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅥ) 2SK3561 uni ..
2SK3561. ,MOSFET 2SK/2SJ SeriesThermal Characteristics Characteristics Symbol Max Unit 2Thermal resistance, channel to case R 3.12 ..
2SK3562 ,MOSFET 2SK/2SJ SeriesThermal Characteristics Characteristics Symbol Max Unit2 Thermal resistance, channel to case R 3.12 ..
2SK3563 ,MOSFET 2SK/2SJ SeriesThermal Characteristics Characteristics Symbol Max Unit 2Thermal resistance, channel to case R 3.57 ..
2SK3563.. ,MOSFET 2SK/2SJ SeriesApplications 10±0.3 2.7±0.2 φ3.2±0.2• Low drain-source ON resistance: R = 1.35Ω (typ.) DS (ON)• Hi ..
2SC4931
