2SC4881 ,Silicon NPN Power Transistors TO-220F packageELECTRICAL CHARACTERISTICS (Tc = 25°C) Weight : 1.7 g (Typ.)CHARACTERISTIC SYMBOL TEST CONDITION UN ..
2SC4883A , Silicon NPN Epitaxial Planar Transistor
2SC4885 ,NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLDDATA SHEETDATA SHEETSILICON TRANSISTOR2SC4885NPN SILICON EPITAXIAL TRANSISTOR3 PINS SUPER ..
2SC4891 ,Very High-Definition CRT Display Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at Ta = 25°C unitCollector-to-Base Voltage VCBO 1500 VCollectopto-Emitter ..
2SC4892 ,Power DeviceAbsolute Maximum Ratings T = 25°CC0.35±0.11.05±0.1Parameter Symbol Rating Unit0.55±0.10.55±0.1Coll ..
2SC4899 , Silicon NPN Epitaxial
2SK3525-01MR ,N CHANNEL SILICON POWER MOSFETFUJI POWER MOSFET2SK3525-01MRN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline DrawingsTO-220F
2SK3527 ,N-CHANNEL SILICON POWER MOSFETApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings a ..
2SK3529-01 , N-CHANNEL SILICON POWER MOSFET
2SK3530 ,Fuji Power MOSFET SuperFAP-G series Target Specification PRELIMINARY2SK3530-01MR (800V/1.9Ω /7A)1) Package TO-220F2) Absolute Maximum Ratings (Tc=25 unles ..
2SK3530-01MR ,Fuji Power MOSFET SuperFAP-G series Target Specification PRELIMINARY2SK3530-01MR (800V/1.9Ω /7A)1) Package TO-220F2) Absolute Maximum Ratings (Tc=25 unles ..
2SK3531-01 , N-CHANNEL SILICON POWER MOSFET
2SC4881
Silicon NPN Power Transistors TO-220F package
TOSHIBA 2SC4881
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE
2SC4881
HIGH CURRENT SWITCHING APPLICATIONS Unit in mm
0 Low Saturation Voltage
: VCE (sat) = 0.4V (MAX.)
0 High Speed Switching Time : tstg = 0.8 Irs (Typ.) E
MAXIMUM RATINGS (Tc = 25°C) .
CHARACTERISTIC SYMBOL RATING UNIT 'i,:',,
Collector-Base Voltage VCBO 60 V 0.7510.15 F
Collector-Emitter Voltage VCEO 50 V 2.54:0.25 2.54:0.25
Emitter-Base Voltage VEBO 5 V 5 1 2 3 :3
D I f - = tl
Collector Current C C 5 A :11 It."
Pulse ICP 8 o v
Base Current IB 1 A
o 1. BASE
Collector Power Ta = 25 C P 2.0 W 2. COLLECTOR
Dissipation Te = 25°C C 20 3. EMITTER
J unction Temperature Tj 150 "C JEDEC -
Storage Temperature Range Tstg -55--150 "C JEIT A -
TOSHIBA 2-10R1A
ELECTRICAL CHARACTERISTICS (Tc = 25°C) Weight 2 1.7 g (Typ.)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 50V, IE = 0 - - 1 ,aA
Emitter Cut-off Current IEBO VEB = 6V, IC = 0 - - 1 PA
Collector-Emi; Breakdown
Voltage V(BR)CEO IC - 10mA, IB - 0 50 - - V
h (1) V = IV, I = IA 100 - 320
DC Current Gain FE CE C
hFE (2) VCE = IV, IC = 2.5A 60 - -
Collector-Emi) Saturation
Vol tage VCE (sat) IC - 2.5A, IB - 125mA - 0.25 0.4 V
Base-Emitter Saturation
Vol tage VBE (sat) IC - 2.5A, IB - 125mA - 1.0 1.3 V
Transition Frequency fT VCE = 4V, IC = IA - 100 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz - 45 - pF
Turn-on Time ton 20 #5 I OUTPUT - 0.1 -
1B1 '*" INPUT ltl cl
Switching . Irla o - N
Time Storage Time tstg 1B2 1B2 v-4 - 0.8 - gs
. 1B1 = -1B2 = 125 mA, V
F 11 T CC - 0.1 -
a me tf DUTY CYCLE s 1% = 30V
1 2001-08-23
TOSHIBA 2SC4881
IC - VBE
COMMON EMITTER t'
S tl VCE = 1 V I
S? 50 S? 6 l.
e 40. e l
E 30 E d
n: - ttt
:3 20 C) I
n: a: /
t; 13 = 10 mA t; Tc = 100°C /
Id M l I
:3 " 2 I /
C) O 25 / 25
0 COMMON EMITTER o ( / _
Tc = 25°C
0 2 4 6 8 10 0 0.4 0.8 1.2 1.6 2.0
C0LLECT0R-EMITTER VOLTAGE VCE (V) BASE-EMITTER VOLTAGE VBE (V)
hEF - IC VCE (sat) - 1C
700 10
500 Tc = 100°C 2: 5 COMMON EMITTER
25 g 3 IC/IB = 20
m 300
ti, 0:3
-25 e A
a g E 1
U 100 'i',, 8 0.5
it E> 0.3
E 50 R13:
i? gp 0.1 T - 0
Rs C - 100 C
8 30 EB 0.05
COMMON EMITTER :2 0.03
VCE = 1 V ti -25
10 0.01
0.03 0.05 0.1 0.3 0.5 1 3 5 10 0.01 0.03 0.1 0.3 1 3 10
COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A)
SAFE OPERATING AREA
VBE(sat)-IC l llllllll I
3 COMMON EMITTER 10 :IC MAX.(PULSED) y.f
F,', 3 IC/IB = 20 g" 5 310 MAX. (CONTINUOUS) \100 pmy.t.
> O K \ l msX -
a - 3 --
_ ht yt
O 10 msX
'l-je E DC OPERATION " l --
g 'i 1 -25 E: Tc=25°C N, \\
D m at 1 _ _ _
Fr a D N N' _
g m U h h h h
5? 0.5 Tc = 100°C 5 0.5
se, t 0.3 X SINGLE NONREPETITIVE \
g 0.3 B PULSE Tc = 25''C N
's? g CURVES MUST BE DERATED
53 0 0.1 LINEARLY WITH INCREASE
g IN TEMPERATURE. Mao MAX.
0.1 0.05
0.03 0.05 0.1 0.3 0.5 1 3 5 10 0.1 0.3 0.5 1 3 5 10 30 50 100
COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V)
2 2001-08-23
TOSHIBA 2SC4881
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-08-23
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