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2SC4844TOSHIBAN/a3000avaiTransistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications


2SC4844 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm  Low noise figure, high gain. 2 NF = 1.8dB, |S | = 9.5dB (f = 2 GHz) 21 ..
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2SC4864 ,NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4867 ,NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
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2SK3520 ,2SK3520FUJI POWER MOSFET2SK3520-01MRN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline DrawingsTO-220F
2SK3520-01MR ,N CHANNEL SILICON POWER MOSFETFeaturesTransient Thermal ImpedanceHigh speed switchingZth(ch-c)=f(t):D=t/T110Low on-resistanceNo s ..


2SC4844
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications
2SC4844 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC4844

VHF~UHF Band Low Noise Amplifier Applications Low noise figure, high gain. NF = 1.8dB, |S21e|2 = 9.5dB (f = 2 GHz)
Maximum Ratings (Ta �
�� � 25°C)
Microwave Characteristics (Ta �
�� � 25°C)
�S21e�2 (1) VCE � 6 V, IC � 3 mA, f � 2 GHz
Electrical Characteristics (Ta �
�� � 25°C) Cre
Note: Cre is measured by 3 terminal method with capacitance bridge.
Unit: mm
Weight: 0.006 g (typ.)
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