2SC4843 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 15.5dB (f = 1 GHz) 2 ..
2SC4844 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.8dB, |S | = 9.5dB (f = 2 GHz) 21 ..
2SC4849 , TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE
2SC4851 ,NPN Epitaxial Planar Silicon Transistor Muting CircuitsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4861 ,NPN Epitaxial Planar Silicon Transistor UHF Converter, Local Oscillator ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4864 ,NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SK3510 ,SWITCHING N-CHANNEL POWER MOSFETELECTRICAL CHARACTERISTICS (TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITZer ..
2SK3511 ,SWITCHING N-CHANNEL POWER MOSFETELECTRICAL CHARACTERISTICS (TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITZer ..
2SK3514 ,N CHANNEL SILICON POWER MOSFETApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings a ..
2SK3515 ,N CHANNEL SILICON POWER MOSFETApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings a ..
2SK3519 ,N CHANNEL SILICON POWER MOSFETApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings a ..
2SK3520 ,2SK3520FUJI POWER MOSFET2SK3520-01MRN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline DrawingsTO-220F
2SC4843
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications
2SC4843 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC4843 VHF~UHF Band Low Noise Amplifier Applications Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 15.5dB (f = 1 GHz)
Maximum Ratings (Ta ��� � 25°C)
Microwave Characteristics (Ta ��� � 25°C)
�S21e�2 (1) VCE � 8 V, IC � 5 mA, f � 2 GHz
Electrical Characteristics (Ta ��� � 25°C) Cre
Note: Cre is measured by 3 terminal method with capacitance bridge.
Unit: mm
Weight: 0.006 g (typ.)
