2SC4839 ,Transistor Silicon NPN Epitaxial Planar TypeApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 12dB (f = 1 GHz) 21e ..
2SC4841 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.8dB, |S | = 8.5dB (f = 2 GHz) 21 ..
2SC4842 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 14dB (f = 1 GHz) 21e ..
2SC4843 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 15.5dB (f = 1 GHz) 2 ..
2SC4844 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.8dB, |S | = 9.5dB (f = 2 GHz) 21 ..
2SC4849 , TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE
2SK3505-01MR ,N CHANNEL SILICON POWER MOSFETAbsolute maximum ratings(Tc=25°C unless otherwise specified)Item Symbol Ratings UnitDrain-source ..
2SK3505-01MR ,N CHANNEL SILICON POWER MOSFETFUJI POWER MOSFET2SK3505-01MRN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline DrawingsTO-220F
2SK3507 ,SWITCHING N-CHANNEL POWER MOSFETDATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3507SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERI ..
2SK3510 ,SWITCHING N-CHANNEL POWER MOSFETELECTRICAL CHARACTERISTICS (TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITZer ..
2SK3511 ,SWITCHING N-CHANNEL POWER MOSFETELECTRICAL CHARACTERISTICS (TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITZer ..
2SK3514 ,N CHANNEL SILICON POWER MOSFETApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings a ..
2SC4839
Transistor Silicon NPN Epitaxial Planar Type
2SC4839 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC4839 VHF~UHF Band Low Noise Amplifier Applications Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz)
Maximum Ratings (Ta ��� � 25°C)
Microwave Characteristics (Ta ��� � 25°C) VCE � 10 V, IC � 5 mA, f � 1 GHz
Electrical Characteristics (Ta ��� � 25°C)
VCB � 10 V, IE � 0, f � 1 MHz (Note)
Note: Cre is measured by 3 terminal method with capacitance bridge.
Unit: mm
Weight: 2.4 mg (typ.)
