2SC4793. ,Silicon NPN Power Transistors TO-220F package2SC47937QC47Q?v - I lPOWER AMPLIFIER
2SC4804 , Silicon NPN Power Transistors
2SC4805 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC4805 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca10˚Parameter Symbol Rating UnitCollector-base voltage (Emitter o ..
2SC4805G ,Silicon NPN epitaxial planar typeAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector-base voltage (Emitter open ..
2SC4808 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SK3468 ,N CHANNEL SILICON POWER MOSFETApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings a ..
2SK3469 ,N CHANNEL SILICON POWER MOSFETFUJI POWER MOSFET2SK3469-01MRN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline DrawingsTO-220F
2SK3469-01MR ,N CHANNEL SILICON POWER MOSFETApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings a ..
2SK3471 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC-DC Converter ApplicationsApplications Unit: mm Low drain-source ON resistance: R = 10 Ω (typ.) DS (ON) High forward t ..
2SK3473 ,Power MOSFET (N-ch 700V<VDSS)Thermal Characteristics 2Characteristics Symbol Max UnitThermal resistance, channel to case R 0.833 ..
2SK3475 ,Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier ApplicationsApplications Unit: mm Output power: P = 630 mW (min) O Gain: G = 14.9dB (min) P Drain ef ..
2SC4793-2SC4793.
Silicon NPN Power Transistors TO-220F package
TOSHIBA 2SC4793
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE
2SC4793
POWER AMPLIFIER APPLICATIONS
DRIVER STAGE AMPLIFIER APPLICATIONS
0 High Transition Frequency : fT=100MHz(Typ.)
0 Complementary to 2SA1837
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT 0.75 10.15
Collector-Base Voltage VCBO 230 V 2.54AO.25 2.54f..0.25
Collector-Emitter Voltage VCEO 230 V r''',-],, 1 2 3 _: g
Emitter-Base Voltage VEBO 5 V i:,:", Eli'.
Collector Current 10 1 A
Base Current IB 0.1 A ;, ESISEECTOR
Cgllgctor: Power Ta = 25°C PC 2.0 W 3. EM ITTER
Dissipation Te = 25°C 20 JEDEC -
Junction Temperature Tj 150 "C JEITA -
Storage Temperature Range Tstg - 55-- 150 "C TOSHIBA 2-10R1A
ELECTRICAL CHARACTERISTICS (Tc=25°C)
Weight : 1.7g (Typ.)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 230V, IE = 0 - - 1.0 PA
Emitter Cut-off Current IEBO VEB = 5V, IC = 0 - - 1.0 pA
Collector-Emitter Breakdown
Vol tage V (BR) CEO IC - 10mA, IB - 0 230 - - V
DC Current Gain hFE VCE = 5V, IC = 100mA 100 - 320
Collector-Emitter Saturation
Voltage VCE (sat) IC - 500mA, IB - 50mA - - 1.5 V
Base-Emitter Voltage VBE VCE = 5V, 10 = 500mA - - 1.0 V
Transition Frequency fT VCE = 10V, 10 = 100mA - 100 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = o, f = 1MHz - 20 - pF
TOSHIBA
2SC4793
10 (A)
COLLECTOR CURRENT
DC CURRENT GAIN hFE
TRANSITION FREQUENCY {T (MHz)
IC - VCE
COMMON EMITTER
To = 25°C
2 4 6 8
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE (sat) - IC
COMMON EMITTER
VCE = 5V
Tc = 100°C
0.01 0.03 0.1 0.3 1
COLLECTOR CURRENT 10 (A)
COMMON EMITTER
Tc=25°C
30 100 300
COLLECTOR CURRENT IC (mA)
VOLTAGE VCE(sat) (V) COLLECTOR CURRENT 10 (A)
COLLECTOR-EMITTER SATURATION
10 (A)
COLLECTOR CURRENT
IC - VBE
Te-- 100°C 25
COMMON EMITTER
VCE = 5V
0 0.2 0.4 0.6 0.8
1.0 1.2 1.4
BASE-EMITTER VOLTAGE VBE (V)
VCE (sat) - IC
COMMON EMITTER
IcllB=10 Tc=100oC
0.003 0.01 0.03 0.1
0.3 l 3
COLLECTOR CURRENT 10 (A)
SAFE OPERATING AREA
10 MAX. (PULSED) lk. P" 1rns)k.
IC MAX. N , p"- 10msX..
(CONTINUOUS) \ A /- 100msyd.
-----------l-H-i------
DC OPERATION " ,y,
Tc=25°C NN ,
N NNJ,
tii):,
IT. SINGLE NONREPETITIVE NNN,
PULSE Tc=25°C N'
CURVES MUST BE DERATED
LINEARLY WITH INCREASE VCEO -
IN TEMPERATURE. MAX
1 3 10 30 100 300
COLLECTOR-EMITTER VOLTAGE VCE (V)
TOSHIBA 2SC4793
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-11-05
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