2SC4738F ,Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier ApplicationsApplications Unit: mm High voltage and high current: V = 50 V, I = 150 mA (max) CEO C Excell ..
2SC4738F ,Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications2SC4738F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4738F Audio Frequency G ..
2SC4738F-GR , Audio Frequency General Purpose Amplifier Applications
2SC4738FV , Audio Frequency General Purpose Amplifier Applications
2SC4738FV , Audio Frequency General Purpose Amplifier Applications
2SC4738FV-Y , Audio Frequency General Purpose Amplifier Applications
2SK3424 ,Power MOS FETELECTRICAL CHARACTERISTICS(TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDrai ..
2SK3426 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max Unit1*Drain curr ..
2SK3430 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES2SK3430-Z TO-220SMD• Super low on-state resistance:★RDS(on)1 = 7.3 mΩ MAX. (VGS = 10 V, ID ..
2SK3434 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES2SK3434-Z TO-220SMD• Super low on-state resistance:RDS(on)1 = 20 mΩ MAX. (VGS = 10 V, ID = ..
2SK3435 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEPRELIMINARY DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3435SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL ..
2SK3435. ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES2SK3435-Z TO-220SMD• Super low on-state resistance:RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = ..
2SC4738F
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications
2SC4738F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4738F Audio Frequency General Purpose Amplifier Applications High voltage and high current: VCEO = 50 V, IC = 150 mA (max) Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) High hFE: hFE = 120~400 Complementary to 2SA1832F Small package
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C) Cob VCB � 10 V, IE � 0, f � 1 MHz
Note: hFE classification Y (Y): 120~240, GR (G): 200~400 ( ) marking symbol
Marking Unit: mm
Weight: 2.3 mg (typ.)
