2SC4691J ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC4694 ,NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier, Muting ApplicationsFeatures Package Dimensions · Adoption of MBIT process.unit:mm · High DC current gain.2059B · High ..
2SC4695 ,NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier, Muting ApplicationsFeatures Package Dimensions · Adoption of FBET process.unit:mm · High DC current gain.2018B · High ..
2SC4702 , High breakdown voltage VCEO = 300 V Small Cob Cob = 1.5 pF Typ.
2SC4703 ,MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTORDATA SHEETSILICON TRANSISTOR2SC4703MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIERNPN SILICON ..
2SC4703-T1 , NPN EPITAXIAL SILICON RF TRANSISTOR FOR
2SK3377-Z ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK3378 , Silicon N Channel MOS FET High Speed Switching
2SK3378 , Silicon N Channel MOS FET High Speed Switching
2SK3378ENTL-E , Silicon N Channel MOS FET High Speed Switching
2SK3385 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK3387 ,Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) Switching Regulator, DC-DC Converter and Motor Drive ApplicationsThermal Characteristics Notice: Characteristics Symbol Max UnitPlease use the S1 pin for gate input ..
2SC4691J
