2SC4690 ,Silicon NPN Power Transistors TO-3PFM packageELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC4691 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca1.6±0.1Parameter Symbol Rating Unit 5˚Collector-base voltage (Em ..
2SC4691 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC4691J ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC4694 ,NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier, Muting ApplicationsFeatures Package Dimensions · Adoption of MBIT process.unit:mm · High DC current gain.2059B · High ..
2SC4695 ,NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier, Muting ApplicationsFeatures Package Dimensions · Adoption of FBET process.unit:mm · High DC current gain.2018B · High ..
2SK3377-Z ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK3378 , Silicon N Channel MOS FET High Speed Switching
2SK3378 , Silicon N Channel MOS FET High Speed Switching
2SK3378ENTL-E , Silicon N Channel MOS FET High Speed Switching
2SK3385 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK3387 ,Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) Switching Regulator, DC-DC Converter and Motor Drive ApplicationsThermal Characteristics Notice: Characteristics Symbol Max UnitPlease use the S1 pin for gate input ..
2SC4690
Silicon NPN Power Transistors TO-3PFM package
TOSHIBA 2SC4690
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE
2SC4690
POWER AMPLIFIER APPLICATIONS Unit in mm
0 Complementary to 2SA1805
0 Recommend for 70W High Fidelity Audio Frequency Amplifier
output Stage.
MAXIMUM RATINGS (Tc = 25°C)
ELECTRICAL CHARACTERISTICS (Tc=25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 140 V 3.15:3}
Collector-Emi; Voltage VCEO 140 V Fc':'-','. 1 2 3 ___3 m.
+01) EHEE ,
Emitter-Base Voltage VEBO 5 V e; _ 3
DC I 10
Collector Current C A l. BASE
Pulse ICP 20 2. COLLECTOR
Base Current IB 1 A 3. EMITTER
Collectoor Power Dissipation PC 80 W JEDEC -
(Tc=25 C) JEITA -
J unction Temperature Tj 150 "C TOSHIBA 2-16F1A
Storage Temperature Range Tstg -55--150 "C Weight : 5.8g (Typ.)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 140V, IE = 0 - - 5.0 PA
Emitter Cut-off Current IEBO VEB = 5V, IC = 0 - - 5.0 pA
Collector-Emitter Breakdown - -
Voltage V (BR) CEO IC - 50mA, IB - 0 140 - - V
hFE (1) VCE=5V, IC-- IA 55 - 160
DC Current Gain (Note)
hFE (2) VCE = 5V, IC = 5A 35 85 -
Collector-Emi; Saturation
Voltage VCE (sat) IC - 7A, IB - 0.7A - 0.3 2.0 V
Base-Emitter Voltage VBE VCE = 5V, 10 = 5A - 0.9 1.5 V
Transition Frequency fT VCE = 5V, 10 = IA - 30 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = o, f = IMHz - 220 - pF
(Note) : hFE (1) Classification
R : 55--110, O : 80-160
TOSHIBA
2SC4690
10 (A)
COLLECTOR CURRENT
DC CURRENT GAIN hFE
TRANSITION FREQUENCY fT (MHz)
IC - VCE
20 COMMON
1B = 10mA EMITTER
Tc = 25°C
0 2 4 6 8 10 12
COLLECTOR-EMITTER VOLTAGE VCE (V)
hFE - 1C
COMMON EMITTER
500 VCE = 5V
300 Te = 100''C
0.01 0.03 0.1
COLLECTOR CURRENT IC (A)
0.3 1 3 10
fT - IC
COMMON EMITTER
100 Tc=25°C
0.01 0.03 0.1 0.3 1 3 10
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT 10 (A)
VCE (sat) IV)
COLLECTOR-EMITTER SATURATION
VOLTAGE
10 (A)
COLLECTOR CURRENT
IC - VBE
COMMON EMITTER
VCE = 5V
Tc = 100°C
0.4 0.8 1.2 1.6 2.0 2.4
BASE-EMITTER VOLTAGE VBE (V)
VCE (sat) - IC
COMMON EMITTER
Ic/IB=10
0.03 25
0.01 0.03 0.1 0.3 1 3 10
COLLECTOR CURRENT IC (A)
SAFE OPERATING AREA
_llllllll (lllll I|__
30 IC MAX. (PULSED) IT. lms)K.
IIIIIIII I 1llll 100 yd. ‘|_
10 10 MAX. ""TI,N,yee,?,, tttsp. l 10ms)k. _-
I I I I I I III\ l I l
'N , V
DC OPERATIONS l
(Te--25''C) I l
I I I I I IIII
lk. SINGLE NONREPETITIVE ss l
PULSE Te=25''C , IIs,
0.5 CURVES MUST BE DERATED s"
0.3 LINEARLY WITH INCREASE IN
TEMPERATURE. VCEO MAX.
0.1 I I I I III
0.3 1 3 10 30 100 300
COLLECTOR-EMITTER VOLTAGE VCE (V)
TOSHIBA 2SC4690
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-11-05
:
www.loq.com
.
