2SC4686A ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TYPE. TV DYNAMIC FOCUS APPLICATIONS, HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH VOLTAGE AMPLIFIER APPLICATIONS.TOSHIBA 2SC4686,2SC4686A- IvvV!v‘ Iv-TV DYNAMIC FOCUS
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2SC4686A
TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TYPE. TV DYNAMIC FOCUS APPLICATIONS, HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH VOLTAGE AMPLIFIER APPLICATIONS.
TOSHIBA
2SC4686,2SC4686A
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TYPE
2SC4686, 2SC4686A
TV DYNAMIC FOCUS APPLICATIONS
HIGH VOLTAGE SWITCHING APPLICATIONS
HIGH VOLTAGE AMPLIFIER APPLICATIONS
0 High Voltage : VCEO = 1200V (Max.)
0 Small Collector Output Capacitance : Cob = 2.2pF (Typ.)
(VCB = 100V)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT 0.75 A0.15
Collector-Base Voltage VCBO 1500 V 2.541025 2.541025
Collector-Emitter 2SC4686 V 1000 V if 1 2 3 _:5 N
Voltage 2SC4686A CEO 1200 'ir-EEE-ni,)
Emitter-Base Voltage VEBO 5 V 2 6
DC IC 50 l. BASE
Collector Current Pulse ICP 100 mA 2. C OLLE CT OR
Base Current IB 25 mA 3. EMITTER
Collector Power Te = 25°C P 10 W JEDEC -
Dissipation Ta=25oc C 2 JEITA SC-67
J unction Temperature Tj 150 "C TOSHIBA 2-10R1A
Storage Temperature Range Tstg -55--150 "C Weight : 1.7g (Typ.)
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 1200V, IE = 0 - - 1.0 PA
Emitter Cut-off Current IEBO VEB = 5V, IC = 0 - - 10 PA
Collector-Base Breakdown
Voltage V (BR) CBO IC = lOOpA, IE = 0 1500 - - V
Collector-Emitter 2SC4686 - - 1000 - -
Breakdown Voltage 2SC4686A V (BR) CEO IC - ImA, IB =0 1200 - - V
DC Current Gain hFE VCE = 5V, IC = 3mA 15 - 60
Collector-Emi) Saturation
Vol tage VCE (sat) IC = 10mA, IB = 2mA - 0.16 1.5 V
Base-Emitter Saturation
Vol tage VBE (sat) IC = 10mA, 1B = 2mA - 0.7 1.5 V
Transition Frequency fT VCE = 10V, IC = 3mA - 5.5 - MHz
Collector Output Capacitance Cob VCB = 100V, f = 1MHz, IE = 0 - 2.2 - pF
TOSHIBA
2SC4686,2SC4686A
COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
COLLECTOR CURRENT
IC - VCE
IB=1mA
COMMON EMITTER
Tc = 25''C
0 4 8 12 16 20 24
C0LLECT0R-EMITTER VOLTAGE VCE (V)
VCE (sat) - IC
30 COMMON EMITTER
IC / IB = 5
0.3 Te = - 25°C
0.1 0.30.5 1 3 5 10 3050100 300
COLLECTOR CURRENT 10 (mA)
IC - VBE
COMMON EMITTER
VCE = 5V
To = 100''C 25
0 0.2 0.4 0.6 0.8 1.0 1.2
BASE-EMITTER VOLTAGE VBE (V)
DC CURRENT GAIN hFE
BASE-EMITTER SATURATION
VOLTAGE VBE (sat) (V)
COLLECTOR OgTPUT CAPACITANCE
hFE - IC
Tc = 100°C
COMMON EMITTER
VCE = 5V
0.30.5 1 3 5 10 30 50 100
COLLECTOR CURRENT IC (mA)
VBE (sat) - IC
COMMON EMITTER
Ic/IB=5
0.30.5 1 3 5 10 30 50 100
COLLECTOR CURRENT 10 (mA)
Cob - VCB
Tc=25°C
f=1MHz
3 5 10 30 50 100 300
COLLECTOR-BASE VOLTAGE VCB (V)
TOSHIBA 2SC4686,2SC4686A
fT - IC rth - tw
CURVES SHOULD BE APPLIED IN THERMAL
LIMITED AREA.
(SINGLE NONREPETITIVE PULSE)
C) INFINITE HEAT SINK
la) NO HEAT SINK
("C/W)
COMMON EMITTER 0
TRANSITION FREQUENCY fT (MHz)
TRANSIENT THERMAL RESISTANCE
Te=25''C 3
0.1 0.3 0.5 1 3 5 10 30 lm 10m 100m 1 10 100 1000
COLLECTOR CURRENT IC (mA) PULSE WIDTH tw (s)
PC - Ta SAFE OPERATING AREA
p; T Tc=Ta 300
o INFINITE HEAT SINK A
5 (2) NO HEAT SINK f3 . 100msyd.
g v IC MAX. (PULSED) .y.C. , 10ms)k.
a 0100 lllllllll Ill \ .
V) - - Ims)i4
E Ft 50 -IC MAX. (CONTINUOUS)
g; 5 DC OPERATION N. ,
3 pt 30 Tc=25°C ,
o o ttt
9.9- D \
g 1: ik. SINGLE NONREPETITIVE ss)S
t p, 10 PULSE Tc=25°C
[l [i 5 CURVES MUST BE DERATED
8 g 3 LINEARLY WITH
INCREASE IN VCEO MAX. (2804686)”
0 20 40 60 80 100 120 140 160 1 TEMPERATURE. VCEO MAX. (2SC4686A)" "
AMBIENT TEMPERATURE Ta (°C) 1 3 IO 30 100 300 1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
3 2001-11-05
TOSHIBA 2SC4686,2SC4686A
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
4 2001-11-05
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