2SC4685 ,TRANSISTOR SILICON NPN EPITAXIAL TYPEELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC4686A ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TYPE. TV DYNAMIC FOCUS APPLICATIONS, HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH VOLTAGE AMPLIFIER APPLICATIONS.TOSHIBA 2SC4686,2SC4686A- IvvV!v‘ Iv-TV DYNAMIC FOCUS
2SC4690 ,Silicon NPN Power Transistors TO-3PFM packageELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC4691 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca1.6±0.1Parameter Symbol Rating Unit 5˚Collector-base voltage (Em ..
2SC4691 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC4691J ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SK3377-Z ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK3378 , Silicon N Channel MOS FET High Speed Switching
2SK3378 , Silicon N Channel MOS FET High Speed Switching
2SK3378ENTL-E , Silicon N Channel MOS FET High Speed Switching
2SK3385 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK3387 ,Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) Switching Regulator, DC-DC Converter and Motor Drive ApplicationsThermal Characteristics Notice: Characteristics Symbol Max UnitPlease use the S1 pin for gate input ..
2SC4685
TRANSISTOR SILICON NPN EPITAXIAL TYPE
TOSHIBA
2SC4685
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE
STROBE FLASH APPLICATIONS
Unit in mm
MEDIUM POWER AMPLIFIER APPLICATIONS 8.3MAX.
1 t....Air!L., 913.1101
sl '' >2 Q m
o High DC Current Gain ojii?,f C . g I
: hFE (1)=800--3200 (VCE=2V, 10:0.5A) g C-''
'. hFE (2)=250 (Min.) (VCE=2V, 1024A) i i“
0 Low Saturation Voltage 12x2: . i Z,
.' VCE (sat)=0.5V (Max.) (Ic=4A, IB=40mA) 017510.35 E
0 High Collector Power Dissipation -
.' P0210W (Tc=25°C), PC-- 1.5W (Ta=25°C) L
2.3t0.1 2.3101
1 2 3 .
F , _ , Q
L2 _f, m um a: Ilii.
MAXIMUM RATINGS (Tc = 25°C) s'-,'.':
g l. EMITTER
CHARACTERISTIC SYMBOL RATING UNIT g EggéECTOR
Collector-Base Voltage VCBO 50 V JEDEC -
Collector-Emi) Voltage VSE: 20 V JEITA -
Emitter-Base Voltage VEBO 8 V TOSHIBA 2-8HIA
DC IC 5 Weight : 0.82g (Typ.)
Collector Current A
Pulse (Note 1) ICP 8
Base Current IE 0.5 A
Collector Power Ta=25°C P 1.5 W
Dissipation Tc = 25°C C 10
J unction Temperature Tj 150 T
Storage Temperature Range Tste -55-150 T
(Note 1) : Pulse Test 2 Pulse Width=10ms (Max.) Duty Cycle=30% (Max.)
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=50V, IE=0 - - 100 nA
Emitter Cut-off Current IEBO VEB=8V, 10:0 - - 100 nA
Collector-Emitter Breakdown
Voltage V (BR) CEO IC = 10mA, IB = 0 20 - - V
h V =2V, I =0.5A 800 - 3200
DC Current Gain FE (1) CE C
hFE (2) VCE = 2V, IC = 4A 250 - -
Collector-Emitter Saturation
Vol tage VCE (sat) 1C = 4A, IB = 40mA - - 0.5 V
Base-Emitter Voltage VBE VCE = 2V, 1C =4A - - 1.2 V
Transition Frequency fT VCE =2V, IC =0.5A - 150 - MHz
Collector Output Capacitance Cob VCB = 10V, IE =0, f = 1MHz - 45 - pF
TOSHIBA 2SC4685
IC - VCE 2 IC - VBE
iii _ _ COMMON EMITTER 0 COMMON EMITTER
50 40 30 20 Tc=25°C H VCE=2V
S? F-q
B 10 E
E D Tc=125°C
j 8 0 0.2 0.4 0.6 0.8 1.0 1.2
U) BASE-EMITTER VOLTAGE VBE (V)
0 1 2 3 4 5 6 V I
CE sat - C
COLLECTOR-EMITTER VOLTAGE VCE (V) 10 ( )
- 3 COMMON EMITTER
hFE 10 a
10000 2 IC/IB=200
Tc=125°C tye 1
3000 t '
= E tl 0.3
z 1000 b? Tc=125°C
- s .‘
< W2 L"
© tt't 53 0.1
E 300 2:
a 'ty'"
B 100 8 0.03
30 COMMON EMITTER 0.01 0.03 0.1 0.3 l 3 10
VCE=2V COLLECTOR CURRENT IC (A)
8.01 0.03 0.1 0.3 1 3 10 SAFE OPERATING AREA
10 . .
COLLECTOR CURRENT IC (A) HC MAX. (PULSED) XX
-IC MAX. h 1
VBE (sat) - IC 5 -(coNTrNUoUs) \
COMMON EMITTER S 3 's, \ \ 10msM
IcllB=200 N N ---l----auu)
.f-?ii. Te-- - 40''C E DC OPERATION N,
SE C9 E Tc=25°C N
ie :0“: M 1 N.
< m D x h
w m D \ h
M > n: \ A
1:: a \
tie, o 0.5 X SINGLE NONREPETITIVE
E if, E PULSE Te=25''C
E .1 g lk. .)k PULSE WIDTH = 10ms (MAX.)
, S U 0.3 DUTY CYCLE=30% (MAX.)
Cl Tc=25''C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE. VCEO MAX.
0.01 0.03 0.1 0.3 1 3 10 1 3 5 10 30 50
COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V)
2 2001-11-05
TOSHIBA 2SC4685
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-11-05
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