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2SC4684TOSHIBAN/a2000avaiTransistor Silicon NPN Epitaxial Type Strobe Flash Applications Medium Power Amplifier Applications
2SC4684PANASONICN/a100avaiTransistor Silicon NPN Epitaxial Type Strobe Flash Applications Medium Power Amplifier Applications


2SC4684 ,Transistor Silicon NPN Epitaxial Type Strobe Flash Applications Medium Power Amplifier Applications2SC4684 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4684 Strobe Flash
2SC4684 ,Transistor Silicon NPN Epitaxial Type Strobe Flash Applications Medium Power Amplifier ApplicationsApplications  High DC current gain : h = 800 to 3200 (V = 2 V, I = 0.5 A) FE (1) CE C : h = 2 ..
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2SC4684
Transistor Silicon NPN Epitaxial Type Strobe Flash Applications Medium Power Amplifier Applications
2SC4684 TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC4684

Strobe Flash Applications
Medium Power Amplifier Applications High DC current gain
: hFE (1) = 800 to 3200 (VCE = 2 V, IC = 0.5 A)
: hFE (2) = 250 (VCE = 2 V, IC = 4 A) Low collector saturation voltage
: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 40 mA) High power dissipation
: PC = 10 W (Tc = 25°C), PC = 1.0 W (Ta = 25°C)
Maximum Ratings (Ta = 25°C)

VCES 40
Note: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
Unit: mm
Weight: 0.36 g (typ.)
Weight: 0.36 g (typ.)
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