2SC4682 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC4684 ,Transistor Silicon NPN Epitaxial Type Strobe Flash Applications Medium Power Amplifier Applications2SC4684 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4684 Strobe Flash
2SC4684 ,Transistor Silicon NPN Epitaxial Type Strobe Flash Applications Medium Power Amplifier ApplicationsApplications High DC current gain : h = 800 to 3200 (V = 2 V, I = 0.5 A) FE (1) CE C : h = 2 ..
2SC4685 ,TRANSISTOR SILICON NPN EPITAXIAL TYPEELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC4686A ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TYPE. TV DYNAMIC FOCUS APPLICATIONS, HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH VOLTAGE AMPLIFIER APPLICATIONS.TOSHIBA 2SC4686,2SC4686A- IvvV!v‘ Iv-TV DYNAMIC FOCUS
2SC4690 ,Silicon NPN Power Transistors TO-3PFM packageELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SK3377-Z ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK3378 , Silicon N Channel MOS FET High Speed Switching
2SK3378 , Silicon N Channel MOS FET High Speed Switching
2SK3378ENTL-E , Silicon N Channel MOS FET High Speed Switching
2SK3385 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK3387 ,Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) Switching Regulator, DC-DC Converter and Motor Drive ApplicationsThermal Characteristics Notice: Characteristics Symbol Max UnitPlease use the S1 pin for gate input ..
2SC4682
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
TOSHIBA 2SC4682
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
2SC4682
STROBE FLASH APPLICATIONS Unit in mm
MEDIUM POWER AMPLIFIER APPLICATIONS 5.IMAX.
0 Excellent hFE Linearity g
3 hFE (1) = 800--3200 (VCE = IV, 10 = 0.5 A) 0.75MAX.
1 hFE (2) = 500 (Typ.) (VCE = 1 V, IC = 3A) LOMAX. ' -
0.8MAX,
0 Low Collector Saturation Voltage
: VCE (sat) = 0.5V (Max.) (10 = 3A, 1B = 30 mA)
2.2MAX.
10 SMIN
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT ii'
Collector-Base Voltage VCBO 30 V _ , _ s-):':', g
V 30 , E
Collector-Emi; Voltage CES V l. EMITTER sr'
VCEO 15 2. COLLECTOR
Emitter-Base Voltage VEBO 6 V 3. BASE
DC I 3
Collector Current C A JEDEC To-92MOD
Pulse ICP 6
JEITA -
Base Current IB 0.8 A TOSHIBA 2 IA
Collector Power Dissipation PC 900 mW . -5d
Junction Temperature Tj 150 "C Weight : 0.36 g (Typ.)
Storage Temperature Range Tstg -55--150 °C
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 30V, IE = 0 - - 1 pA
Emitter Cut-off Current IEBO VEB = 6V, IC = 0 - - 10 pA
Collector-Emitter Breakdown
Voltage V(BR) CEO IC - 10 mA, 1B - 0 15 - - V
. hFE (1) VCE = 1 V, IC = 0.5A 800 - 3200
DC Current Gain hFE (2) VCE = IV, IC = 3A 300 500 -
Collector-Emi) Saturation
Voltage VCE (sat) IC - 3 A, IB - 30mA - 0.25 0.5 V
Base-Emitter Voltage VBE VCE = 1 V, 1C = 3 A - 0.85 1.2 V
Transition Frequency fT VCE = 1 V, 1C = 0.5A - 150 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = o, f = 1 MHz - 30 - pF
1 2001-11-05
TOSHIBA
IC - VCE
COMMON EMITTER
Ta = 25"C
10 (A)
COLLECTOR CURRENT
IE = 100%
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
10 VCE (sat) - IC
COMMON
EMITTER
3 IC/IB = 200
Ta = 100''C
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (mV)
0.01 0.03 0.1 0.3 1 3 10
COLLECTOR CURRENT 10 (mA)
COLLECTOR POWER DISSIPATION
0 4O 80 120 160 200 240
AMBIENT TEMPERATURE Ta (°C)
DC CURRENT GAIN hFE
lc (A)
COLLECTOR CURRENT
COLLECTOR CURRENT 10 (A)
0.05 NONREPETITIVE PULSE
0.03 CURVES MUST BE
2SC4682
hFE - IC
COMMON
EMITTER
VCE = 1 V
0.01 0.1 1 10
COLLECTOR CURRENT 10 (A)
IC - VBE
COMMON
EMITTER
VCE = 1 V
2 __,,,,,,,,,,,,,"
'r(C','.'.7'''r,
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE-EMITTER VOLTAGE VBE (V)
SAFE OPERATING AREA
310 MAX. (PULSED) X
5 l l l l ! llll ,
-Ic MAX. (CONTINUOUS) \
Ims).k(--
N 10 ms X _
0.3 Ta = 25°C
X SINGLE
Ta = 25°C
DERATED LINEARLY WITH
INCREASE IN VCEO MAX.
TEMPERATURE. I I I _ Ill
0.1 0.3 0.5 1 3
C0LLECT0R-EMITTER VOLTAGE VCE (V)
TOSHIBA 2SC4682
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-11-05
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