2SC4655 ,Small-signal deviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector-base voltage (Emitter open ..
2SC4662 , Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
2SC4662 , Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
2SC4664 , Switching Power Transistor(8A NPN)
2SC4666 ,Transistor Silicon NPN Epitaxial Type (PCT process)Applications High h : h = 600~3600 FE FE High voltage: V = 50 V CEO High collector curren ..
2SC4669 , Switching Power Transistor(10A NPN)
2SK332 ,SILICON N CHANNEL TRANSISTOR2$K332No. 9 569031"ip"):rVNrir:tsMtr4ali'l%asi=ltBhaler.vipz,gassstafslli)1is,',i'sts''tiEtte . ',M ..
2SK332 ,SILICON N CHANNEL TRANSISTOR2$K332No. 9 569031"ip"):rVNrir:tsMtr4ali'l%asi=ltBhaler.vipz,gassstafslli)1is,',i'sts''tiEtte . ',M ..
2SK3320-Y , For Low Noise Audio Amplifier Applications
2SK3324 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C)CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONSDS ..
2SK3325 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDr ..
2SK3326 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES• Low gate charge :QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A)• Gate voltage ratin ..
2SC4655
