2SC4634LS ,NPN Triple Diffused Planar Silicon Transistor 1500V / 10mA High-Voltage Amplifier, High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..
2SC4635 ,High-Voltage Amp, High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta =25°C unitCollector-to-Base Voltage _ Haro 1500 VCo1leetor-to-Emitte ..
2SC4635LS ,NPN Triple Diffused Planar Silicon Transistor 1500V / 20mA High-Voltage Amplifier, High-Voltage Switching ApplicationsFeatures Package Dimensions•High breakdown voltage(V min=1500V).CEO unit : mm•Small Cob(typical Cob ..
2SC4635LS ,NPN Triple Diffused Planar Silicon Transistor 1500V / 20mA High-Voltage Amplifier, High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..
2SC4636 ,High-Voltage Amp, High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta =25°C unitCo1leetor-trr.Base Voltage V0130 2000 VColleetor-toamitter ..
2SC4636.. ,High-Voltage Amp, High-Voltage Switching ApplicationsOrdering number: EN 3705ANo.3705A2SC4636NPN Triple Diffused Planar Silicon TransistorHigh-Voltage A ..
2SK3296 ,Power MOS FETFEATURES• 4.5 V drive available• Low on-state resistanceRDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 18 ..
2SK3296-S ,Power MOS FETDATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3296SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEORDERING ..
2SK3296-Z ,Power MOS FETELECTRICAL CHARACTERISTICS(TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDrai ..
2SK3299 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES•Low gate charge QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 10 A)•Gate voltage rating ± ..
2SK3299-Z-E1 ,N-ch Power MOS FETELECTRICAL CHARACTERISTICS(TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDrai ..
2SK3299-ZJ ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS(TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDrai ..
2SC4634LS
