2SC4627J ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC4630 ,High-Voltage Amp, High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25°C unitCollector-to-Base Voltage VCBO 1500 VCollector-to-Emitter ..
2SC4630LS ,NPN Triple Diffused Planar Silicon Transistor 900V / 100mA High-Voltage Amplifier, High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..
2SC4632 ,High-Voltage Amp, High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta =25°C unitCollector-to-Basg Voltage VCBO 1500 VCollector-to-Emitter ..
2SC4632LS ,NPN Triple Diffused Planar Silicon Transistor 1200V / 10mA High-Voltage Amplifier, High-Voltage Switching ApplicationsFeatures Package Dimensions•High breakdown voltage(V min=1200V).CEO unit : mm•Small Cob(typical Cob ..
2SC4633 ,High-Voltage Amp, High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25°C unitCollector-to-Base Voltage VCBO 1500 VCollectur-to-Emitter ..
2SK3290 , Silicon N Channel MOS FET High Speed Switching
2SK3290 , Silicon N Channel MOS FET High Speed Switching
2SK3291 ,N-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SK3293 ,N-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SK3295 ,Power MOS FETELECTRICAL CHARACTERISTICS(TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITZero ..
2SK3296 ,Power MOS FETFEATURES• 4.5 V drive available• Low on-state resistanceRDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 18 ..
2SC4627J
