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2SC4605
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT) VIDEO OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY HIGH SPEED SWITCHING APPLICATIONS
TOSHIBA
2SC4605
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT)
2SC4605
VIDEO OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY
HIGH SPEED SWITCHING APPLICATIONS
0 High Transition Frequency : fT=1.1GHz (Typ.)
0 Low Collector Output Capacitance : Cob=4.8pF (Typ.)
0 High Voltage : VCEO = 100V
0 High Collector Power Dissipation Capability : Pc=10W
0.75 10.15
MAXIMUM RATINGS (Ta = 25°C)
2. i .2 2.541.025
CHARACTERISTIC SYMBOL RATING UNIT m ID.
Collector-Base Voltage VCBO 100 V 'ir-EEE-nt.'
Collector-Emitter Voltage VCEO 100 V d e
Emitter-Base Volta e V 3 V l. BASE
g DC I EBO O 5 2. COLLECTOR
Collector Current C . A 3. EMITTER
Peak ICP 1.0 JEDEC -
Base Current IB 0.2 A EIAJ SC-67
Collector Power Ta-- 25°C PC 2 w TOSHIBA 2-10R1A
Dissipation Tc=25°C 10 Weight : 1.7g
J unction Temperature Tj 150 "C
Storage Temperature Range Tstg -55--150 T
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 100V, IE = 0 - - 100 PA
Emitter Cut-off Current IEBO VEB = 3V, 1C = 0 - - 100 PA
Collector-Emitter Breakdown
Voltage V (BR) CEO IC - lmA, IB - 0 100 - - V
h V = 10V, I = 100 A 30 70 150
DC Current Gain FE (1) CE C m
hFE (2) VCE = 10V, IC = 300mA 20 - -
Collector-Emitter Saturation
Voltage VCE (sat) IC - 300mA, IB - 30mA - 0.8 3.0 V
Base-Emitter Saturation
Vol tage VBE (sat) IC - 300mA, IB - 30mA - 1.3 2.5 V
Transition Frequency fT VCE = 10V, 10 = 100mA - 1100 - MHz
Collector Output Capacitance Cob VCB = 30V, IE = o, f = 1MHz - 4.8 5.2 pF
TOSHIBA
10 (A)
COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION
DC CURRENT GAIN hpE
VOLTAGE VCE (sat) (V)
IC - VCE
COMMON
EMITTER
Tc = 25''C
IB=0.5mA
8 12 16 20 24
C0LLECT0R-EMITTER VOLTAGE VCE (V)
hFE - IC
COMMON EMITTER
Te = 25''C
VCE=20V
3 10 30 100 300
COLLECTOR CURRENT IC (mA)
VCE (sat) - IC
COMMON EMITTER
Tc = 25°C
IC/IB=10
3 10 30 100 300
COLLECTOR CURRENT IC (mA)
2SC4605
IC - VBE
COMMON EMITTER
'ij" VCE=10V
5 Tc=100°C
0 0.5 1.0 1.5 2.0 2.5 3.0
BASE-EMITTER VOLTAGE VBE (V)
hFE - IC
COMMON EMITTER
VCE=10V
= Tc=100°C
'a' 100
0.3 1 3 10 30 100 300 1000
COLLECTOR CURRENT 10 (mA)
VCE (sat) - IC
COMMON EMITTER
2 Ic/IB=10
ct2 g 1
558 0.3
U) -25
0.3 1 3 10 30 100 300 1000
COLLECTOR CURRENT IC (mA)
TOSHIBA 2SC4605
VBE(sat) - IC VBE(sat) - IC
COMMON EMITTER
1C / IB = 10
COMMON EMITTER
Tc = 25''C
Tc = - 25°C
VBE (sat) (V)
VBE (sat) (V)
BASE-EMITTER SATURATION VOLTAGE
BASE-EMI'I‘TER SATURATION VOLTAGE
0.03 .
0.3 l 3 10 30 100 300 1000 0.3 l 3 10 30 100 300 1000
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
fT - IC Cob, Cre - VCB
COMMON EMITTER
Tc = 25''C
CE =20V
TRANSITION FREQUENCY fT (GHz)
CAPACITANCE COILCre (pF)
0.03 .
0.3 1 3 10 30 100 300 0.3 1 3 10 30 100 300
COLLECTOR CURRENT IC (mA) COLLECTOR-BASE VOLTAGE VCB (V)
PC - Ta SAFE OPERATING AREA
t 20 2 I I I I I llll l l
C.) (1) Tc=Ta IC MAX. (PULSED) .)k. " Irnsy.4
a INFINITE HEAT SINK iii 1: I I I Illrlt 2, , - 10ms>z< -_--_E,
a 16 (2) NO HEAT SINK Q LHC MAX. (CONTINUOUS) - 100ms2f -
2 - 0.5 I I I IIII N -
Em I I I I III I ';
ili 12 E 0.3 DC OPERATION N N
a E Tc=25°C
© 5 l (lllll 1 N,,
g 0 0.1
g 8 g yd. SINGLE NONREPETITIVE
m E 0.05 PULSE Te--25''C
g 'Q CURVES MUST BE DERATED
B 4 g 0.03 VCEO
a o LINEARLY WITH INCREASE M AX
rd IN TEMPERATURE.
o 0 0.01
0 20 40 60 80 100 120 140 160 1 3 5 10 30 50 100 300 500
AMBIENT TEMPERATURE Ta (°C) COLLECTOR-EMITTER VOLTAGE VCE (V)
3 2001-05-24
TOSHIBA 2SC4605
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
4 2001-05-24
:
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