2SC4559 ,Power DeviceAbsolute Maximum Ratings T = 25°C –0.1C0.8±0.1Parameter Symbol Rating Unit2.54±0.3Collector-base v ..
2SC4568 ,NPN SILICON EPITAXIAL TRANSISTOR UHF TV TUNER OSC/MIXERDATA SHEETDATA SHEETSILICON TRANSISTOR2SC4568NPN SILICON EPITAXIAL TRANSISTORUHF TV TUNER ..
2SC4569 ,UHF TV TUNER OSC/MIXER NPN SILICON EPITAXIAL TRANSISTORDATA SHEETDATA SHEETSILICON TRANSISTOR2SC4569UHF TV TUNER OSC/MIXERNPN SILICON EPITAXIAL T ..
2SC4570 ,NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLDDATA SHEETDATA SHEETSILICON TRANSISTOR2SC4570NPN SILICON EPITAXIAL TRANSISTORSUPER MINI MOL ..
2SC4570-T1 ,NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLDDATA SHEETDATA SHEETSILICON TRANSISTOR2SC4570NPN SILICON EPITAXIAL TRANSISTORSUPER MINI MOL ..
2SC4570-T2 ,NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLDDATA SHEETDATA SHEETSILICON TRANSISTOR2SC4570NPN SILICON EPITAXIAL TRANSISTORSUPER MINI MOL ..
2SK3108 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25°C)Characteristics Symbol Test Conditions MIN. TYP. MAX. UnitDra ..
2SK3109 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C)Characteristics Symbol Test Conditions MIN. TYP. MAX. UnitDr ..
2SK311 , SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING)
2SK3110 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25°C)Characteristics Symbol Test Conditions MIN. TYP. MAX. UnitDra ..
2SK3112 ,MOS FETELECTRICAL CHARACTERISTICS (TA = 25°C)Characteristics Symbol Test Conditions MIN. TYP. MAX. UnitZer ..
2SK3113 ,Switching power MOSFETFEATURES • Low on-state resistance RDS(on) = 4.4 Ω MAX. (VGS = 10 V, ID = 1.0 A) • Low gate charge ..
2SC4559
