2SC4555 ,NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4559 ,Power DeviceAbsolute Maximum Ratings T = 25°C –0.1C0.8±0.1Parameter Symbol Rating Unit2.54±0.3Collector-base v ..
2SC4568 ,NPN SILICON EPITAXIAL TRANSISTOR UHF TV TUNER OSC/MIXERDATA SHEETDATA SHEETSILICON TRANSISTOR2SC4568NPN SILICON EPITAXIAL TRANSISTORUHF TV TUNER ..
2SC4569 ,UHF TV TUNER OSC/MIXER NPN SILICON EPITAXIAL TRANSISTORDATA SHEETDATA SHEETSILICON TRANSISTOR2SC4569UHF TV TUNER OSC/MIXERNPN SILICON EPITAXIAL T ..
2SC4570 ,NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLDDATA SHEETDATA SHEETSILICON TRANSISTOR2SC4570NPN SILICON EPITAXIAL TRANSISTORSUPER MINI MOL ..
2SC4570-T1 ,NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLDDATA SHEETDATA SHEETSILICON TRANSISTOR2SC4570NPN SILICON EPITAXIAL TRANSISTORSUPER MINI MOL ..
2SK3105 ,N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHINGFEATURES12• Can be driven by a 4 V power source• Low on-state resistance0.650.95 0.95RDS(on)1 = 95 ..
2SK3107 ,N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHINGFEATURES+0.10.2–0• Can be driven by a 2.5-V power source0.60.5 0.5• Low gate cut-off voltage0.75 ± ..
2SK3107-T1 ,Nch enhancement type MOS FETFEATURES+0.10.2–0• Can be driven by a 2.5-V power source0.60.5 0.5• Low gate cut-off voltage0.75 ± ..
2SK3108 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25°C)Characteristics Symbol Test Conditions MIN. TYP. MAX. UnitDra ..
2SK3109 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C)Characteristics Symbol Test Conditions MIN. TYP. MAX. UnitDr ..
2SK311 , SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING)
2SC4555
