2SC4548 ,NPN High Voltage DriverAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4549 , isc Silicon NPN Power Transistor
2SC4550 ,Silicon transistorfeatures low VCE(sat) and high hFE. This transistor isideal for use in drivers such as DC/DC conve ..
2SC4552 ,Silicon transistorfeatures low VCE(sat) and high hFE. This transistor isideal for use in drivers such as DC/DC conve ..
2SC4554 ,Silicon transistorDATA SHEETSILICON POWER TRANSISTOR2SC4554NPN SILICON EPITAXIAL TRANSISTORFOR SWITCHINGThe 2S ..
2SC4555 ,NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SK30ATM ,Field Effect Transistor Silicon N Channel Junction Type Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit ApplicationsApplications High breakdown voltage: V = −50 V GDS High input impedance: I = −1 nA (max) (V ..
2SK3105 ,N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHINGFEATURES12• Can be driven by a 4 V power source• Low on-state resistance0.650.95 0.95RDS(on)1 = 95 ..
2SK3107 ,N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHINGFEATURES+0.10.2–0• Can be driven by a 2.5-V power source0.60.5 0.5• Low gate cut-off voltage0.75 ± ..
2SK3107-T1 ,Nch enhancement type MOS FETFEATURES+0.10.2–0• Can be driven by a 2.5-V power source0.60.5 0.5• Low gate cut-off voltage0.75 ± ..
2SK3108 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25°C)Characteristics Symbol Test Conditions MIN. TYP. MAX. UnitDra ..
2SK3109 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C)Characteristics Symbol Test Conditions MIN. TYP. MAX. UnitDr ..
2SC4548
