2SC4541 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications2SC4541 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4541 Power Amplifier
2SC4541 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsApplications Low saturation voltage: V = 0.5 V (max) (I = 1.5 A) CE (sat) C High speed swi ..
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2SC4549 , isc Silicon NPN Power Transistor
2SC4550 ,Silicon transistorfeatures low VCE(sat) and high hFE. This transistor isideal for use in drivers such as DC/DC conve ..
2SK3079A ,Field Effect Transistor Silicon N Channel MOS Type 470 MHz Band Amplifier ApplicationsApplications Unit: mm Output power: P = 33.50dBmW (2.2 W) (min) o Gain: G = 13.50dB (min) ..
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2SC4541
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications
2SC4541 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4541 Power Amplifier Applications
Power Switching Applications Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A) High speed switching time: tstg = 0.5 µs (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1736
Maximum Ratings (Ta = 25°C) Tstg
Note: Mounted on ceramic substrate (250 mm2 × 0.8 t)
Unit: mm
Weight: 0.05 g (typ.)
