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2SC4540TOSHIBAN/a14750avaiTransistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications


2SC4540 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsApplications  Low saturation voltage: V = 0.5 V (max) (I = 500 mA) CE (sat) C High speed swi ..
2SC4541 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications2SC4541 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4541 Power Amplifier
2SC4541 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsApplications  Low saturation voltage: V = 0.5 V (max) (I = 1.5 A) CE (sat) C  High speed swi ..
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2SC4540
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications
2SC4540 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4540

Power Amplifier Applications
Power Switching Applications Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 500 mA) High speed switching time: tstg = 0.4 µs (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1735
Maximum Ratings (Ta = 25°C)
Tstg
Note: Mounted on ceramic substrate (250 mm2 × 0.8 t)
Unit: mm
Weight: 0.05 g (typ.)
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