2SC4539 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsApplications Low saturation voltage: V = 0.5 V (max) (I = 700 mA) CE (sat) C High speed sw ..
2SC4540 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsApplications Low saturation voltage: V = 0.5 V (max) (I = 500 mA) CE (sat) C High speed swi ..
2SC4541 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications2SC4541 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4541 Power Amplifier
2SC4541 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsApplications Low saturation voltage: V = 0.5 V (max) (I = 1.5 A) CE (sat) C High speed swi ..
2SC4544 ,Silicon NPN Power Transistors TO-220F packageAPPLICATIONSCOLOR TV CHROMA OUTPUT
2SC4548 ,NPN High Voltage DriverAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SK3078 ,FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM)APPLICATIONS (GSM) Unit: mm Output Power : P = 27.0 dBmW (Min.) OGain : G = 12.5 dB (Min.) P ..
2SK3078A ,Field Effect Transistor Silicon N Channel MOS Type VHF/UHF Band Amplifier ApplicationsApplications Unit: mm Output power: P ≥ 28.0dBmW o Gain: G ≥ 8.0dB p Drain Efficiency: ηD ..
2SK3079A ,Field Effect Transistor Silicon N Channel MOS Type 470 MHz Band Amplifier ApplicationsApplications Unit: mm Output power: P = 33.50dBmW (2.2 W) (min) o Gain: G = 13.50dB (min) ..
2SK3080 , Silicon N Channel MOS FET High Speed Power Switching
2SK3080 , Silicon N Channel MOS FET High Speed Power Switching
2SK3081 , Silicon N Channel MOS FET High Speed Power Switching
2SC4539
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications
2SC4539 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4539 Power Amplifier Applications
Power Switching Applications Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 700 mA) High speed switching time: tstg = 0.3 µs (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1743
Maximum Ratings (Ta = 25°C) Tstg
Note: Mounted on ceramic substrate (250 mm2 × 0.8 t)
Unit: mm
Weight: 0.05 g (typ.)
