2SC4520 ,NPN Epitaxial Planar Silicon TransistorsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4522 ,NPN Epitaxial Planar Silicon Transistors High-Speed Switching ApplicationsFeatures Package Dimensions · Adoption of FBET, MBIT process.unit:mm · Large current capacity.2045B ..
2SC4527 ,Transistor Silicon NPN Epitaxial Planar Type TV Tuner, UHF Oscillator Applications (common base) TV Tuner, UHF Converter Applications (common base)Applications (common base) Transition frequency is high and dependent on current excellently. ..
2SC4531 , Silicon NPN Power Transistors
2SC4532 , 2SC4532
2SC4536 ,MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTORDATA SHEETDATA SHEETSILICON TRANSISTOR2SC4536MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITA ..
2SK3059 ,SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITZer ..
2SK3060 ,Nch MOS FET for large current switchingELECTRICAL CHARACTERISTICS (TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDra ..
2SK3061 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDr ..
2SK3061 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES• Low on-state resistanceRDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 35 A)RDS(on)2 = 12 mΩ MAX ..
2SK3062 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDr ..
2SK3064 ,Small-signal device
2SC4520
