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2SC4519 TOSHIBA N/a2702avaiHigh-Definition CRT Display齆PN Epitaxial Planar Silicon Transistors High-Speed Switching Applications
2SC4519SANYON/a78600avaiHigh-Definition CRT Display齆PN Epitaxial Planar Silicon Transistors High-Speed Switching Applications


2SC4519 ,High-Definition CRT Display齆PN Epitaxial Planar Silicon Transistors High-Speed Switching ApplicationsFeatures Package Dimensions · Adoption of FBET process.unit:mm · Low collector-to-emitter saturatio ..
2SC4519 ,High-Definition CRT Display齆PN Epitaxial Planar Silicon Transistors High-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4520 ,NPN Epitaxial Planar Silicon TransistorsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4522 ,NPN Epitaxial Planar Silicon Transistors High-Speed Switching ApplicationsFeatures Package Dimensions · Adoption of FBET, MBIT process.unit:mm · Large current capacity.2045B ..
2SC4527 ,Transistor Silicon NPN Epitaxial Planar Type TV Tuner, UHF Oscillator Applications (common base) TV Tuner, UHF Converter Applications (common base)Applications (common base)  Transition frequency is high and dependent on current excellently. ..
2SC4531 , Silicon NPN Power Transistors
2SK3057 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDS ..
2SK3058 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDS ..
2SK3059 ,SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITZer ..
2SK3060 ,Nch MOS FET for large current switchingELECTRICAL CHARACTERISTICS (TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDra ..
2SK3061 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 °C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDr ..
2SK3061 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES• Low on-state resistanceRDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 35 A)RDS(on)2 = 12 mΩ MAX ..


2SC4519

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