2SC4489 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4490 ,NPN Epitaxial Planar Silicon Transistors High-Definition CRT Display Video Output ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4493 ,NPN Triple Diffused Planar Silicon Transistor High-Voltage Amplifier, High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4495 , Silicon NPN Triple Diffused Planar Transistor(Audio Temperature Compensation and General Purpose)
2SC4495. , Silicon NPN Triple Diffused Planar Transistor(Audio Temperature Compensation and General Purpose)
2SC4497 ,High Voltage Control ApplicationsApplications Unit: mm High voltage: V = 300 V, V = 300 V CBO CEO Low saturation voltage: V = ..
2SK3024 ,Power DeviceElectrical Characteristics (T = 25°C)CParameter Symbol Conditions min typ max UnitDrain to Source c ..
2SK3025 ,Power DeviceElectrical Characteristics (T = 25°C)CParameter Symbol Conditions min typ max UnitDrain to Source c ..
2SK3026 ,Silicon N-Channel Power F-MOS FETFeaturesl Avalanche energy capacity guaranteedl High-speed switchingunit: mml Low ON-resistancel No ..
2SK303 ,N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SK303-3 ,Silicon N-Channel Power F-MOS FETAbsolute Maximum Ratings (T = 25°C)C2.54±0.2Parameter Symbol Ratings Unit5.08±0.4Drain to Source br ..
2SK3035 ,Power DeviceElectrical Characteristics (T = 25°C)CParameter Symbol Conditions min typ max UnitDrain to Source c ..
2SC4489
