2SC4486 ,NPN Epitaxial Planar Silicon Transistors High-Current Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4488 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4489 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4490 ,NPN Epitaxial Planar Silicon Transistors High-Definition CRT Display Video Output ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4493 ,NPN Triple Diffused Planar Silicon Transistor High-Voltage Amplifier, High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4495 , Silicon NPN Triple Diffused Planar Transistor(Audio Temperature Compensation and General Purpose)
2SK302 ,Field Effect Transistor Silicon N Channel MOS Type FM Tuner, VHF RF Amplifier ApplicationsApplications Unit: mm Low reverse transfer capacitance: C = 0.035 pF (typ.) rss Low noise fi ..
2SK3023 ,Power DeviceElectrical Characteristics (T = 25°C)CParameter Symbol Conditions min typ max UnitDrain to Source c ..
2SK3024 ,Power DeviceElectrical Characteristics (T = 25°C)CParameter Symbol Conditions min typ max UnitDrain to Source c ..
2SK3025 ,Power DeviceElectrical Characteristics (T = 25°C)CParameter Symbol Conditions min typ max UnitDrain to Source c ..
2SK3026 ,Silicon N-Channel Power F-MOS FETFeaturesl Avalanche energy capacity guaranteedl High-speed switchingunit: mml Low ON-resistancel No ..
2SK303 ,N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SC4486
