2SC4409 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Power Amplifier Applications Power switching applicationsApplications Unit: mmPower switching
2SC4410 ,Small-signal deviceElectrical Characteristics (Ta=25˚C)
2SC4409
Transistor Silicon NPN Epitaxial Type (PCT Process) Power Amplifier Applications Power switching applications
2SC4409 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4409 Power Amplifier Applications
Power switching applications Low collector saturation voltage: VCE (sat) = 0.5V (max) (at IC = 1A) High speed switching time: tstg = 500ns (typ.) Small flat package PC = 1~2 W (Mounted on ceramic substrate) Complementary to 2SA1681
Maximum Ratings (Ta ��� � 25°C) Tstg
Note: 2SC4409 mounted on ceramic substrate (250 mm2 � 0.8 t)
Unit: mm
Weight: 0.05 g (typ.)
