2SC4408 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsELECTRICAL CHARACTERISTICS (Ta =25°C) Weight : 0.36g (Typ.)CHARACTERISTIC SYMBOL TEST CONDITION UNI ..
2SC4409 ,Transistor Silicon NPN Epitaxial Type (PCT Process) Power Amplifier Applications Power switching applicationsApplications Unit: mmPower switching
2SC4410 ,Small-signal deviceElectrical Characteristics (Ta=25˚C)
2SC4408
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications
TOSHIBA 2SC4408
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS Unit in mm
POWER SWITCHING APPLICATIONS 5.IMAX,
0 Low Collector Saturation Voltage .' VCE (sat)=0-5V (Max.) E
0 High Collector Power Dissipation : Pc=900mW (Ta=25°C) 0.75MAX.
o High Speed Switching Time :tstg=500ns (Typ.) 1.0MAX. - '
0.8MAX. 3 2 E
0 Complementary to 2SA1680 , g
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT . 1 1.27
1 2 3 ye"
Collector-Base Voltage VCBO 80 V ii,
Collector-Emitter Voltage VCEO 50 V nin n1» .4: =a'l' ti'
Emitter-Base Voltage VEBO 6 V E
1. EMITTER
Collector Current IC 2 A 2. COLLECTOR
Base Current IB 0.2 A 3. BASE
Collector Power Dissipation PC 900 mW JEDEC TO-92MOD
J unction Temperature Tj 150 "C JEIT A
Storage Temperature Range Tstg -55--150 T -
TOSHIBA 2-5J1A
ELECTRICAL CHARACTERISTICS (Ta =25°C) Weight : 0.36g (Typ.)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=80V, IE=O - - 1.0 ph
Emitter Cut-off Current IEBO VEB=6V, 10:0 - - 1.0 ph
Collector-Emi; Breakdown
Voltage V (BR) CEO IC=10mA, IB=0 50 - - V
. hFE (1) VCE=2V, Ic=IOOmA 120 - 400
DC Current Gain hFE (2) VCE= 2V, IC-- 1.5 A 40 - -
Collector-Emi; Saturation
Vol tage VCE (sat) IC=IA, IB=0.05A - - 0.5 V
Base-Emitter Saturation
Vol tage VBE (sat) IC-- IA, IB=0.05A - - 1.2 V
Transition Frequency fT VCE=2V, IcleOmA - 100 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 14 - pF
Turn-on Time ton 2t)/ps 1B1 OUTPUT - 0.1 -
I - C}
Switching . BI Il I EINPUT - 5; 0 5
Time Storage Time tstg 1B2 1B2 - . - /JS
IBI = -IB2=0.05A, =
1 2001-11-05
TOSHIBA
10 (A)
COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
10 (A)
COLLECTOR CURRENT
IC - VCE
IB =2mA
COMMON EMITTER Ta=25°C
0 1 2 3 4 5
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE(sat) - IC
COMMON EMITTER
1 Ic/IB=20
Ta = 100'C
0.001 0.003 0.01 0.03 0.1 0.3 1 3 5
COLLECTOR CURRENT IC (A)
IC - VBE
COMMON EMITTER
VCE = 2V
Ta-- 100°C 25
0 0.2 0.4 0.6 0.8 1.0 1.2
BASE-EMITTER VOLTAGE VBE (V)
DC CURRENT GAIN hpE
BASE-EMITTER SATURATION
VOLTAGE VBE(sat) (V)
10 (A)
COLLECTOR CURRENT
2SC4408
hFE - IC
COMMON EMITTER
VCE = 2v
300 Ta = 100''C
0.001 0.003 0.01 0.03 0.1
0.3 1 3 5
COLLECTOR CURRENT IC (A)
VBE (sat) - IC
Ta = - 25°C
0.5 100
COMMON EMITTER
IC/IB =20
0.001 0.003 0.01 0.03 0.1 0.3 1 3 5
COLLECTOR CURRENT IC (A)
SAFE OPERATING AREA
y.f SINGLE NONREPETITIVE PULSE Ta=25°C
CURVES MUST BE DERATED LINEARLY WITH
INCREASE IN TEMPERATURE.
10 I I l l l I III I
I I I I I I III I
I l 1 1 a HH 1
5210 MAX. (PULSED) lk.
- lllllllll I \ 1ms)k.
IC MAX. (CONTINUOUS) = I I
'N _ l 10ms).k. -
1 N "x (
\ 100ms)?(. N x,':
N ‘1 h h
0.5 N h \
0.3 DC OPERATION l
(Ta=25°C) Ns
N VCEO
0.05 syAx.
o.03 NI I
0.1 0.3 1 3 10 30 100
COLLECTOR-EMITTER VOLTAGE VCE (V)
TOSHIBA 2SC4408
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-11-05
:
www.loq.com
.
