2SC4332 ,NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHINGFEATURES• Low collector saturation voltageVCE(sat) = 0.3 V MAX. (IC = 3 A / IB = 0.15 A)• Fast swit ..
2SC4342 ,High-speed switching silicon transistorDATA SHEETSILICON POWER TRANSISTOR2SC4342NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) ..
2SC4351 ,DARLINGTON POWER TRANSISTORDATA SHEETDARLINGTON POWER TRANSISTOR2SC4351NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CON ..
2SC4357 , FOR HIGH CURRENT DRIVE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC4361 , PNP/NPN Epitaxial Planar Silicon Transistors
2SC4363 ,Switching ApplicationsOrdering number: EN 2809Applications. Switching circuit, inverter circuit, interface circuit, drive ..
2SK2925S , Low on-resistance RDS =0.060 typ. 4V gate drive device can be driven from 5V source
2SK2926 , Silicon N Channel MOS FET High Speed Power Switching
2SK2926 , Silicon N Channel MOS FET High Speed Power Switching
2SK2927 , Silicon N Channel MOS FET High Speed Power Switching
2SK2927 , Silicon N Channel MOS FET High Speed Power Switching
2SK2933 , Silicon N Channel MOS FET High Speed Power Switching
2SC4332
