2SC4331 ,High-speed switching silicon power transistorfeatures a very lowcollector-to-emitter saturation voltage.This transistor is ideal for use in swit ..
2SC4332 ,NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHINGFEATURES• Low collector saturation voltageVCE(sat) = 0.3 V MAX. (IC = 3 A / IB = 0.15 A)• Fast swit ..
2SC4342 ,High-speed switching silicon transistorDATA SHEETSILICON POWER TRANSISTOR2SC4342NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) ..
2SC4351 ,DARLINGTON POWER TRANSISTORDATA SHEETDARLINGTON POWER TRANSISTOR2SC4351NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CON ..
2SC4357 , FOR HIGH CURRENT DRIVE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC4361 , PNP/NPN Epitaxial Planar Silicon Transistors
2SK2924 ,Silicon N-Channel Power F-MOS FETElectrical Characteristics (T = 25°C)CParameter Symbol Conditions min typ max UnitDrain to Source c ..
2SK2924 ,Silicon N-Channel Power F-MOS FETAbsolute Maximum Ratings (T = 25°C)C1 237 Parameter Symbol Ratings Unit1: GateDrain to Source break ..
2SK2925 , Silicon N Channel MOS FET High Speed Power Switching
2SK2925S , Low on-resistance RDS =0.060 typ. 4V gate drive device can be driven from 5V source
2SK2925S , Low on-resistance RDS =0.060 typ. 4V gate drive device can be driven from 5V source
2SK2926 , Silicon N Channel MOS FET High Speed Power Switching
2SC4331
